TITLE

High mobility of pentacene field-effect transistors with polyimide gate dielectric layers

AUTHOR(S)
Kato, Yusaku; Shingo Iba; Teramoto, Ryohei; Sekitano, Tsuyoshi; Someya, Takao; Kawaguchi, Hiroshi; Sakurai, Takayasu
PUB. DATE
May 2004
SOURCE
Applied Physics Letters;5/10/2004, Vol. 84 Issue 19, p3789
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Polyimide gate dielectric layers cured at 180 °C have been employed to fabricate high-quality pentacene field-effect transistors on polyethylenenaphthalate-based films. The surface roughness (root-mean square) of gate dielectric layers characterized by atomic force microscopy is only 0.2 nm, while that of the base film is 1 nm. The transistors with pentacene channel layers deposited on 990 nm polyimide gate dielectric layers attain the on/off ratio of 106 and mobility of 0.3 cm²/V s. Furthermore, by decreasing the thickness of polyimide gate dielectric layers down to 540 nm, the mobility is enhanced up to 1 cm²/V s.
ACCESSION #
13029160

 

Related Articles

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics