Propagation loss in GaN-based ridge waveguides

Skorka, O.; Meyler, B.; Salzman, J.
May 2004
Applied Physics Letters;5/10/2004, Vol. 84 Issue 19, p3801
Academic Journal
GaN ridge waveguides were fabricated by selective area growth in an organometallic vapor phase epitaxial system. The growth enhancement on a 3.5 µm wide exposed channel versus the masked area width was measured. The propagation losses of a series of GaN multimode waveguides, with different widths, were measured by the outscattering technique at λ=488 nm. The internal optical loss of the GaN ridge waveguide was found to be αint∼4.45 cm-1. Sidewall scattering loss (αscat) and the additional optical loss due to metal electrodes were also measured. The fabricated waveguides may be a basic component for integrated optic circuits.


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