TITLE

Propagation loss in GaN-based ridge waveguides

AUTHOR(S)
Skorka, O.; Meyler, B.; Salzman, J.
PUB. DATE
May 2004
SOURCE
Applied Physics Letters;5/10/2004, Vol. 84 Issue 19, p3801
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
GaN ridge waveguides were fabricated by selective area growth in an organometallic vapor phase epitaxial system. The growth enhancement on a 3.5 µm wide exposed channel versus the masked area width was measured. The propagation losses of a series of GaN multimode waveguides, with different widths, were measured by the outscattering technique at λ=488 nm. The internal optical loss of the GaN ridge waveguide was found to be αint∼4.45 cm-1. Sidewall scattering loss (αscat) and the additional optical loss due to metal electrodes were also measured. The fabricated waveguides may be a basic component for integrated optic circuits.
ACCESSION #
13029156

 

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