Broadband 1400 nm emission from Ni2+ in zinc—alumino—silicate glass

Suzuki, Takenobu; Ohishi, Yasutake
May 2004
Applied Physics Letters;5/10/2004, Vol. 84 Issue 19, p3804
Academic Journal
Broadband near-infrared emission from Ni2+ in zinc-alumino-silicate glass was observed at room temperature. The emission band had a peak at ∼1400 nm with a bandwidth more than 300 nm, and covered the O, E, S, C, and L bands (1260-1625 nm). The emission lifetime was more than 200 µs even at room temperature. The observed near-infrared emission could be attributed to the ³A2g(³F)→³ T1g(³F) transition of Ni2+ in octahedral sites. This nickel-doped glass can be expected as an amplification medium for tunable lasers and broadband optical amplifiers for the wavelength division multiplexing transmission system applications.


Related Articles

  • Time- and spectrally resolved ultrafast gain dynamics of a semiconductor optical amplifier under phase-correlated multiwavelength pulse amplification. Archundia, Luis C.; Resan, Bojan; Delfyett Jr, Peter J. // Applied Physics Letters;11/15/2004, Vol. 85 Issue 20, p4567 

    The ultrafast gain dynamics of an AlGaAs semiconductor optical amplifier (SOA) are measured under phase-correlated multiwavelength pulse amplification using time-resolved pump-probe techniques. Both the temporal and spectral gain dynamics are measured. Carrier heating due to two photon...

  • High-speed modulation and switching with gain in a GaAlAs traveling-wave optical amplifier. Hegarty, J.; Jackson, K. A. // Applied Physics Letters;1984, Vol. 45 Issue 12, p1314 

    We demonstrate optical amplification of 10-ps-long pulses in a traveling-wave type GaAs double heterostructure laser diode. A continuous train of mode-locked pulses from a dye laser focused end on into the GaAs active region is amplified by a factor of 10 under injection by a synchronous train...

  • Optimized SOA ups power in DBR tunable laser. Overton, Gail // Laser Focus World;Dec2007, Vol. 43 Issue 12, p36 

    The article reports that researchers at Bookham research facility in Northamptonshire, England achieved a power level of more than 20 decibel (dBm) using the semiconductor optical amplifier (SOA) in a tunable distributed-Bragg-reflector (DBR) laser. The finding is noted to show that DBR lasers...

  • Thermal Lensing of Edge-pumped Slab Lasers-I. Chen, B.; Chen, Y.; Simmons, J.; Chung, T. Y.; Bass, M. // Applied Physics B: Lasers & Optics;Mar2006, Vol. 82 Issue 3, p413 

    We present realistic calculations of thermal lensing in edge-pumped, Yb3+ doped yttrium aluminum garnet (YAG), slab lasers for both straight-through and zigzag propagation. Using ray tracing and finite element analysis we simulate the distributions of absorbed pump power, temperature, and...

  • A novel surface emitting GaAs/AlGaAs laser diode beam steering device based on surface mode.... Kock, A.; Gmachl, C. // Applied Physics Letters;2/14/1994, Vol. 64 Issue 7, p836 

    Develops a surface-emitting gallium arsenide/aluminum gallium arsenide laser diode beam steering device based on surface mode emission. Results of laser mode coupling to surface mode; Control of surface emission beam dispersion by laser emission wavelength modification; Capability of...

  • SOA debate rages on. Fuller, Meghan // Lightwave;Mar2004, Vol. 21 Issue 3, p13 

    Focuses on the availability of semiconductor optical amplifiers (SOAs) in the commercial market. Economics of semiconductor manufacturing; Comparison between SOAs and EDFAs; Increased interest in the use of technology for wavelength conversion.

  • Chip amplifier for all-optical networking. Bush, Steve // Electronics Weekly;2/16/2005, Issue 2181, p7 

    This article reports that Centre for Integrated Photonics has launched a semiconductor optical amplifier offering optimized non-linear operating characteristics for use in all-optical networking functions such as wavelength conversion. The SOA-NL-OEC-1550 has fast gain recovery that makes it...

  • New sensor can boost range of security.  // InTech;Dec2004, Vol. 51 Issue 12, p14 

    This article focuses on sensors used to safeguard civil and industrial infrastructure. Real-time monitoring of oil and gas fields and pipelines, power networks, bridges, dams, and buildings, for instance, is key to ensure security. A limitation to using sensors with different capabilities to...

  • Optical frequency-selective amplification in a distributed feedback type semiconductor laser amplifier. Kawaguchi, Hitoshi; Magari, Katsuaki; Oe, Kunishige; Noguchi, Yoshio; Nakano, Yoshinori; Motosugi, George // Applied Physics Letters;1/12/1987, Vol. 50 Issue 2, p66 

    Optical frequency-selective amplification of an injected optical signal in a distributed feedback type semiconductor laser amplifier is studied. Based on this mechanism an optical demultiplexer with optical gain for optical frequency-division multiplexing is developed. A 9 GHz spectrum...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics