Neutron reflectivity study of ultrathin SiO2 on Si

Bertagna, Valérie; Erre, René; Saboungi, Marie-Louise; Petitdidier, Sébastien; Lévy, Didier; Menelle, Alain
May 2004
Applied Physics Letters;5/10/2004, Vol. 84 Issue 19, p3816
Academic Journal
Neutron reflectivity was applied to the study of ultrathin silicon oxide films, of interest due to the requirement for reduced dimensions of the elemental components in microelectronic devices [I. Eisele and W. Hansch, Thin Solid Films 369, 60 (2000); C. Battaglin et al., Thin Solid Films 351, 176 (1999)]. Silicon oxides were prepared using three different ways: Chemical, electrochemical, and thermal oxidation. From neutron reflectivity, it was possible to derive the oxide thickness, the Si/SiO2 interface roughness, and the density of the layer. In complementary measurements, the chemistry of the chemical and thermal surface layers was obtained by infrared spectroscopy. The anodic oxides were found to be as dense as thermal oxides, but the chemical one was less dense. This result was checked by Fourier transform infrared spectroscopy.


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