A hybrid Al0.10Ga0.90As/AlAs bilayer electron system with tunable g-factor

De Poortere, E.P.; Shayegan, M.
May 2004
Applied Physics Letters;5/10/2004, Vol. 84 Issue 19, p3837
Academic Journal
We have fabricated a device composed of two closely coupled two-dimensional electron systems, one of which resides within an AlAs quantum well at the X point of the Brillouin zone, while the other is contained at the F point in the alloy Al0.10Ga0.90As, grown directly below the AlAs. The electronic properties of these two systems are strongly asymmetric: the respective cyclotron masses in the AlAs and the Al0.10Ga0.90As layers, measured in units of the free electron mass, are ∼0.5 and 0.07, while the effective electron g-factors are approximately 7 and 0. With the help of front and back gates, we can confine mobile carriers to either or both of the two quantum wells, as confirmed by magnetotransport measurements.


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