Observation of nonequilibrium longitudinal optical phonons in InN and its implications

Liang, W.; Tsen, K.T.; Ferry, D.K.; Hai Lu; Schaff, William J.
May 2004
Applied Physics Letters;5/10/2004, Vol. 84 Issue 19, p3849
Academic Journal
Nonequilibrium longitudinal optical phonons in a high quality, single crystal wurtzite structure InN sample have been studied by picosecond Raman spectroscopy. Our experimental results demonstrate that the band gap of InN cannot be around 1.89 eV; but are consistent with a band gap of about 0.8 eV. In addition, they disprove the idea that 0.8 eV luminescence observed recently in InN is due to deep level radiative emission in InN.


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