Electroluminescence as internal light source for measurement of the photonic strength of random porous GaP

van Driel, A.F.; Vanmaekelbergh, D.; Kelly, J.J.
May 2004
Applied Physics Letters;5/10/2004, Vol. 84 Issue 19, p3852
Academic Journal
During porous etching of GaP, electroluminescence ranging from the ultraviolet to the near-infrared is generated at the interface of the porous and the nonporous layer. This is used to measure the wavelength-dependent transmission of light through porous layers in a wide thickness range. Two types of porous structures, characterized by different pore sizes, were studied. The transmission of the emitted light gives valuable information about wavelength-dependent diffusion of light through porous GaP.


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