Self-assembled growth and optical emission of silver-capped silicon nanowires

Qiu, T.; Wu, X.L.; Yang, X.; Huang, G.S.; Zhang, Z.Y.
May 2004
Applied Physics Letters;5/10/2004, Vol. 84 Issue 19, p3867
Academic Journal
Structured silver-capped silicon nanowires were fabricated via electroless metal deposition on a silicon wafer in an ionic silver HF solution through selective chemical etching. Their formation mechanism was explained on the basis of self-assembled localized microscopic electrochemical cell model. The metal-semiconductor composite nanostructure was found to have a strong ultraviolet-emitting property with an emission peak position at 330 nm. The intensity of the peak nonmonotonously varies with annealing temperature and time, but its position remains unchanged. Emission and excitation spectral analyses suggest that the ultraviolet emission is closely related to the existence of silver vacancy defects in silver nanocaps formed during sample fabrication. A specific vacancy density is required to produce the strong ultraviolet emission.


Related Articles

  • Recent Progress in Patterned Silicon Nanowire Arrays: Fabrication, Properties and Applications. Yan Zhang; Teng Qiu; Wenjun Zhang; Chu, Paul K. // Recent Patents on Nanotechnology;Jan2011, Vol. 5 Issue 1, p62 

    Currently there is great interest in patterned silicon nanowire arrays and applications. The accurately controlled fabrication of patterned silicon nanowire arrays with the desirable axial crystallographic orientation using simpler and quicker ways is very desirable and of great importance to...

  • Fabrication of Si1-xGex alloy nanowire field-effect transistors. Kim, Cheol-Joo; Yang, Jee-Eun; Lee, Hyun-Seung; Jang, Hyun M.; Jo, Moon-Ho; Park, Won-Hwa; Kim, Zee Hwan; Maeng, Sunglyul // Applied Physics Letters;7/16/2007, Vol. 91 Issue 3, p033104 

    The authors present the demonstration of nanowire field-effect transistors incorporating group IV alloy nanowires, Si1-xGex. Single-crystalline Si1-xGex alloy nanowires were grown by a Au catalyst-assisted chemical vapor synthesis using SiH4 and GeH4 precursors, and the alloy composition was...

  • Applying contact to individual silicon nanowires using a dielectrophoresis (DEP)-based technique. Leiterer, Christian; Broenstrup, Gerald; Jahr, Norbert; Urban, Matthias; Arnold, Cornelia; Christiansen, Silke; Fritzsche, Wolfgang // Journal of Nanoparticle Research;May2013, Vol. 15 Issue 5, p1 

    One major challenge for the technological use of nanostructures is the control of their electrical and optoelectronic properties. For that purpose, extensive research into the electrical characterization and therefore a fast and reliable way of contacting these structures are needed. Here, we...

  • Critical condition for growth of silicon nanowires. Dhalluin, Florian; Desré, Pierre J.; den Hertog, Martien I.; Rouvière, Jean-Luc; Ferret, Pierre; Gentile, Pascal; Baron, Thierry // Journal of Applied Physics;Nov2007, Vol. 102 Issue 9, p094906 

    The existence of a critical radius on the growth of Si nanowires by the vapor-liquid-solid mechanism is examined. By varying the experimental growth parameters, we have shown a dependence of the minimum nanowires radius with the Si reactive species partial pressure, demonstrating that the...

  • The influence of the surface migration of gold on the growth of silicon nanowires. Hannon, J. B.; Kodambaka, S.; Ross, F. M.; Tromp, R. M. // Nature;3/2/2006, Vol. 440 Issue 7080, p69 

    Interest in nanowires continues to grow, fuelled in part by applications in nanotechnology. The ability to engineer nanowire properties makes them especially promising in nanoelectronics. Most silicon nanowires are grown using the vapour–liquid–solid (VLS) mechanism, in which the...

  • Nanowires: Hall effect breaks new ground. LaPierre, Ray // Nature Nanotechnology;Nov2012, Vol. 7 Issue 11, p695 

    The article focuses on the importance of semiconductor nanowires in nanotechnology and nanoscience. It informs that nanowires are discovered by Sigurd Wagner, Professor at Princeton University and David Ellis, director of planning and future studies at the Detroit Medical Center (DMC). It states...

  • Fabrication and Properties of Ultraviolet Photo-Detector Based on SiC Nanowires. Xiaoyan Yu; Gang Peng; Gongyi Li; Yanlan He; Yingqiu Zhou // Hans Journal of Nanotechnology;May2012, Vol. 2 Issue 2, p19 

    A new type of Ultraviolet Photodetector (UVPDs) based on a bundle of highly aligned SiC nanowires was fabricated and the photo-electric properties of the UVPDs including I-V characteristic and time response et al. were studied in this paper. SiC nanowires were prepared by pyrolysis of a polymer...

  • Flat-Top and Stacking-Fault-Free GaAs-Related Nanopillars Grown on Si Substrates. Kouta Tateno; Guoqiang Zhang; Hideki Gotoh; Tetsuomi Sogawa // Journal of Nanotechnology;2012, p1 

    The VLS (vapor-liquid-solid) method is one of the promising techniques for growing vertical III-V compound semiconductor nanowires on Si for application to optoelectronic circuits. Heterostructures grown in the axial direction by the VLS method and in the radial direction by the general...

  • Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers. Canham, L. T. // Applied Physics Letters;9/3/1990, Vol. 57 Issue 10, p1046 

    Indirect evidence is presented that free-standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography. The novel approach uses electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers. Mesoporous Si layers of...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics