Observation of a Be-correlated donor state in GaN

Albrecht, F.; Reislöhner, U.; Pasold, G.; Hülsen, C.; Witthuhn, W.; Grillenberger, J.; Dietrich, M.
May 2004
Applied Physics Letters;5/10/2004, Vol. 84 Issue 19, p3876
Academic Journal
A Be-related donor level was identified in the band gap of GaN. Thermal admittance spectroscopy (TAS) was combined with the radiotracer principle by applying the radioactive isotope 7Be which was implanted into n-type and p-type GaN. TAS spectra of n-type GaN recorded, repeatedly, during the elemental transmutation of 7Be to 7Li reveal one shallow donor level undergoing concentration changes correlated to the radioactive decay (7Be→7Li;T½=53.3d). From this, a relation is deduced between Be and this level at 390 meV below the conduction band edge of GaN. Furthermore, the implantation of 7Be was observed to enhance the hole concentration significantly in Mg-doped p-type GaN. A Be-correlated acceptor state was not detected.


Related Articles

  • Theory of hole initiated impact ionization in bulk zincblende and wurzite GaN. Oguzman, Ismail H.; Bellotti, Enrico // Journal of Applied Physics;6/15/1997, Vol. 81 Issue 12, p7827 

    Presents the first calculations of hole initiated interband impact ionization in bulk zincblende and wurzite phase gallium nitride (GaN). Utilization of a Monte Carlo simulation in the calculations; Numerically generated hole initiated impact ionization transition rates; Prediction that the...

  • Theory of high field carrier transport and impact ionization in wurtzite GaN. Part II: Application to avalanche photodetectors. Moresco, Michele; Bertazzi, Francesco; Bellotti, Enrico // Journal of Applied Physics;Sep2009, Vol. 106 Issue 6, p063719-1 

    The coming to age of GaN-based ultraviolet avalanche photodiodes (APDs) has made them increasingly preferred over PIN photodetectors in several areas spanning from communication to defense systems, and from commercial to scientific applications. In this work, which is the second article of a...

  • Response to ‘‘Comment on ‘The exactness of the extended Koopmans’ theorem: A numerical study’’ [J. Chem. Phys. 99, 6221 (1993)]. Sundholm, Dage; Olsen, Jeppe // Journal of Chemical Physics;10/15/1993, Vol. 99 Issue 8, p6222 

    The exactness of the extended Koopmans’ theorem (EKT) has been studied by performing extensive multiconfiguration Hartree–Fock and configuration interaction calculations on excited states of Be and Be+. The results show that the EKT ionization potential for the Be(1S) to Be+(2P)...

  • Persistent photoconductivity in n-type GaN. Hirsch, Michele T.; Wolk, J.A.; Walukiewicz, W.; Haller, E.E. // Applied Physics Letters;8/25/1997, Vol. 71 Issue 8, p1098 

    Investigates persistent photoconductivity in n-type GaN. Observation on metastable behavior of photoexcited carriers; Nonexponential decay of photoconductivity; Determination of the optical ionization energy; Dependence of the photoconductive decay on temperature.

  • Observation of huge nonlinear absorption enhancement near exciton resonance in GaN. Kung-Hsuan Lin; Gia-Wei Chern; Yin-Chieh Huang; Keller, Stacia; DenBaars, Steven P.; Chi-Kuang Sun // Applied Physics Letters;10/13/2003, Vol. 83 Issue 15, p3087 

    Huge excitonic enhancement of two-photon absorption near the exciton-transition energy was observed in the GaN system. The peak value of the nonlinear absorption coefficient is at least 1500 cm/GW, corresponding to an enhancement factor of >100. The room temperature exciton dephasing time is...

  • Dual nature of acceptors in GaN and ZnO: The curious case of the shallow MgGa deep state. Lany, Stephan; Zunger, Alex // Applied Physics Letters;4/5/2010, Vol. 96 Issue 14, p142114 

    Employing a Koopmans corrected density functional method, we find that the metal-site acceptors Mg, Be, and Zn in GaN and Li in ZnO bind holes in deep levels that are largely localized at single anion ligand atoms. In addition to this deep ground state (DGS), we observe an effective-masslike...

  • Dislocation line charge screening within n-type gallium nitride. Baghani, Erfan; O'Leary, Stephen K. // Journal of Applied Physics;Jan2013, Vol. 113 Issue 2, p023709 

    A revised electrostatic theory for the charged dislocation lines within n-type GaN is formulated, this formalism allowing for the screening of the charge trapped along the dislocation lines, by both free carriers and a partial ionization of the impurities within the space-charge region...

  • Production of ultra-pure I-123 from the [sup 123]Te(p,n)[sup 123]I reaction. Hupf, H. B.; Beaver, J. E.; Armbruster, J. M.; Pendola, J. P. // AIP Conference Proceedings;2001, Vol. 576 Issue 1, p845 

    The problems and potentials for producing I-123 (T1/2= 13.27 h) with high radionuclidic purity (RNP) in Curie quantities has been discussed in many publications for over 35 years. Depending upon the nuclear reaction selected, the isotopic enrichment of the target material used and the energy of...

  • Temporal variation of Be fallout and its inventory in purple soil in the Three Gorges Reservoir region, China. Shi, Zhonglin; Wen, Anbang; Yan, Dongchun; Zhang, Xinbao; Ju, Li // Journal of Radioanalytical & Nuclear Chemistry;Jun2011, Vol. 288 Issue 3, p671 

    The deposition flux of Be was measured in the range from 0.4 to 5.2 Bq md, with a mean value of 2.6 Bq md, during the period of May 31, 2009-May 31, 2010 in the Three Gorges Reservoir region, China. The low annual deposition flux of Be was probably due to the adsorption of Be within high...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics