InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structures

Wierer, J.J.; Krames, M.R.; Epler, J.E.; Gardner, N.F.; Craford, M.G.; Wendt, J.R.; Simmons, J.A.; Sigalas, M.M.
May 2004
Applied Physics Letters;5/10/2004, Vol. 84 Issue 19, p3885
Academic Journal
Electrical operation of InGaN/GaN quantum-well heterostructure photonic crystal light-emitting diodes (PXLEDs) is demonstrated. A triangular lattice photonic crystal is formed by dry etching into the top GaN layer. Light absorption from the metal contact is minimized because the top GaN layers are engineered to provide lateral current spreading, allowing carrier recombination proximal to the photonic crystal yet displaced from the metal contact. The chosen lattice spacing for the photonic crystal causes Bragg scattering of guided modes out of the LED, increasing the extraction efficiency. The far-field radiation patterns of the PXLEDs are heavily modified and display increased radiance, up to ∼1.5 times brighter compared to similar LEDs without the photonic crystal.


Related Articles

  • Envelope-function analysis of wurtzite InGaN/GaN quantum well light emitting diodes. Xiao, D.; Kim, K.W.; Zavada, J.M. // Journal of Applied Physics;7/1/2004, Vol. 96 Issue 1, p723 

    Fundamental electrical and optical properties of strained wurtzite InGaN/GaN-based quantum-well light-emitting diodes are calculated based on the Rashba–Sheka–Pikus Hamiltonian in the vicinity of the Γ point. It is found that the strain and the strain-induced piezoelectric...

  • Optical anisotropy in ultraviolet InGaN/GaN quantum-well light-emitting diodes with a general crystal orientation. Park, Seoung-Hwan; Ahn, Doyeol; Oh, Jae-Eung // Applied Physics Letters;1/7/2008, Vol. 92 Issue 1, p011130 

    The crystal orientation effect on optical anisotropy in ultraviolet InGaN/GaN quantum-well (QW) light-emitting diodes are investigated using the non-Markovian gain model with many-body effects. The spontaneous emission for the y′ polarization largely increases with a crystal angle because...

  • Microplasma breakdown of InGaN/GaN heterostructures in high-power light-emitting diodes. Veleschuk, V.; Vlasenko, A.; Kisselyuk, M.; Lyashenko, O. // Journal of Applied Spectroscopy;Mar2013, Vol. 80 Issue 1, p117 

    Microplasma breakdown luminescence of InGaN/GaN heterostructures in different types of high-power light emitting diodes is studied. It is shown that the spectrum of the breakdown luminescence, the luminescence onset voltage, the current in the first microplasma, and the number of microplasmas...

  • AlGaN multiple-quantum-well-based, deep ultraviolet light-emitting diodes with significantly reduced long-wave emission. JianPing Zhang, P.; Shuai Wu; Shiva Rai, P.; Vasavi Mandavilli, P.; Vinod Adivarahan, P.; Chitnis, Ashay; Shatalov, Maxim; Khan, Muhammad Asif // Applied Physics Letters;10/27/2003, Vol. 83 Issue 17, p3456 

    We report on a deep UV light-emitting diode over sapphire substrate with AlGaN multiple-quantum-well active region. Pulsed atomic-layer epitaxy deposited low-defect AlN/AlGaN buffers and an optimized active layer design yielded a sharp quantum-well emission peak at 287 nm and very little...

  • In[sub x]Ga[sub 1-x]N light emitting diodes on Si substrates fabricated by Pd-In metal bonding and laser lift-off. Wong, W. S.; Wong, W.S.; Sands, T.; Cheung, N. W.; Cheung, N.W.; Kneissl, M.; Bour, D. P.; Mei, P.; Romano, L. T.; Johnson, N. M. // Applied Physics Letters;10/30/2000, Vol. 77 Issue 18 

    Indium-gallium nitride (In[sub x]Ga[sub 1-x]N) single-quantum-well (SQW) light emitting diodes (LEDs), grown by metalorganic chemical vapor deposition on sapphire, were transferred onto Si substrates. The thin-film In[sub x]Ga[sub 1-x]N SQW LED structures were first bonded onto a n[sup +]-Si...

  • Improvement in light-output efficiency of InGaN/GaN multiple-quantum well light-emitting diodes by current blocking layer. Huh, Chul; Lee, Ji-Myon; Kim, Dong-Joon; Park, Seong-Ju // Journal of Applied Physics;9/1/2002, Vol. 92 Issue 5, p2248 

    The fabrication and characterization of an InGaN/GaN multiple-quantum well (MQW) light-emitting diode (LED) with a SiO[sub 2] current blocking layer inserted beneath the p-pad electrode is described. The light-output power and external quantum efficiency for the InGaN/GaN MQW LED chip with a...

  • Rapid photoelectric diagnostics of LEDs based on InGaN/GaN heterostructures. Baranovskiy, M.; Glinskii, G. // Technical Physics Letters;May2013, Vol. 39 Issue 5, p460 

    A new photoelectric method for rapid diagnostics of light-emitting diodes (LEDs) based on InGaN/GaN multiple quantum well (QW) heterostructures has been developed. An automated setup has been created for determining the arrangement of QWs in heterostructures, quality of interfaces, and degree of...

  • A polarity-driven nanometric luminescence asymmetry in AlN/GaN heterostructures. Tizei, L. H. G.; Meuret, S.; March, K.; Hestroffer, K.; Auzelle, T.; Daudin, B.; Kociak, M. // Applied Physics Letters;10/6/2014, Vol. 105 Issue 14, p1 

    Group III Nitrides nanowires are well suited materials for the design of light emitting devices. The internal electric field created by spontaneaous and piezoelectric polarizations in these materials poses some difficulties, but also possible solutions, towards this goal. Here, we report on the...

  • Hopping Transport of Charge Carriers in LEDs Based on Multiple InGaN/GaN Quantum Wells. Prudaev, I.; Zubrilkina, Yu.; Baktybaev, А.; Romanov, I. // Russian Physics Journal;Jan2015, Vol. 57 Issue 9, p1246 

    The results of experimental studies of forward current-voltage characteristics of blue LEDs with an active region consisting of the multiple InGaN/GaN quantum wells are presented. A model explaining the limitation of the forward current at decreasing temperature is proposed. The model is based...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics