TITLE

H-related defect complexes in HfO2: A model for positive fixed charge defects

AUTHOR(S)
Joongoo Kang; Lee, E.-C.; Chang, K.J.; Young-Gu Jin
PUB. DATE
May 2004
SOURCE
Applied Physics Letters;5/10/2004, Vol. 84 Issue 19, p3894
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Based on first-principles theoretical calculations, we investigate the hydrogenation effect on the defect properties of oxygen vacancies (VO) in HfO2. A defect complex of VO and H behaves as a shallow donor for a wide range of Fermi levels, with a positive charge state, and this complex is energetically stable against its dissociation into VO and H. We suggest that the VO-H complex is responsible for the formation of positive fixed charges, which neutralize negative fixed charges during the postannealing process of SiOx/HfO2 stack.
ACCESSION #
13029125

 

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