TITLE

Amorphization of silicon carbide by carbon displacement

AUTHOR(S)
Davanathan, R.; Gao, F.; Weber, W.J.
PUB. DATE
May 2004
SOURCE
Applied Physics Letters;5/10/2004, Vol. 84 Issue 19, p3909
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have used molecular dynamics simulations to examine the possibility of amorphizing silicon carbide (SiC) by exclusively displacing C atoms. At a defect generation corresponding to 0.2 displacements per atom, the enthalpy surpasses the level of melt-quenched SiC, the density decreases by about 15%, and the radial distribution function shows a lack of long-range order. Prior to amorphization, the surviving defects are mainly C Frenkel pairs (67%), but Si Frenkel pairs (18%) and antisite defects (15%) are also present. The results indicate that SiC can be amorphized by C sublattice displacements. Chemical short-range disorder, arising mainly from Frenkel pair production, plays a significant role in the amorphization.
ACCESSION #
13029120

 

Related Articles

  • Mechanisms of amorphization-induced swelling in silicon carbide: the molecular dynamics answer. Bertolus, M.; Ribeiro, F.; Defranceschi, M. // European Physical Journal B -- Condensed Matter;Dec2007, Vol. 60 Issue 4, p423 

    We present here the continuation of an investigation of the irradiation-induced swelling of SiC using classical molecular dynamics (CMD) simulations. Heavy ion irradiation has been assumed to affect the material in two successive steps (a) creation of local atomic disorder, modeled by the...

  • Effects of irradiation on the mechanical behavior of twined SiC nanowires. Jin, Enze; Niu, Li-Sha; Lin, Enqiang; Duan, Zheng // Journal of Applied Physics;Mar2013, Vol. 113 Issue 10, p104309 

    Irradiation is known to bring new features in one-dimensional nano materials. In this study, we used molecular dynamics simulations to investigate the irradiation effects on twined SiC nanowires. Defects tend to accumulate from outside toward inside of the twined SiC nanowires with increasing...

  • Formation of a p-n junction in silicon carbide by aluminum doping at room temperature using a.... Eryu, Osamu; Okuyama, Yasuo // Applied Physics Letters;10/2/1995, Vol. 67 Issue 14, p2052 

    Examines the formation of a p-n junction in n-type silicon carbide (6H-SiC) by aluminum doping. Use of pulsed laser doping method; Irradiation of 6H-SiC substrate in atmosphere by an KrF excimer laser; Determination of the depth profile of aluminum by secondary ion mass spectroscopy; Analysis...

  • The effect of irradiation on the properties of SiC and devices based on this compound. Kalinina, E. // Semiconductors;Jul2007, Vol. 41 Issue 7, p745 

    Issues related to the production of radiation defects in silicon carbide of various polytypes and with differing conductivity types and concentrations of charge carriers as a result of irradiation with high-energy particles in a wide range of their energies and masses (from electrons to heavy Bi...

  • Simulation of interaction between nickel and silicon carbide during the formation of ohmic contacts. Aleksandrov, O. V.; Kozlovski, V. V. // Semiconductors;Jul2009, Vol. 43 Issue 7, p885 

    For the first time, the quantitative model of interaction between silicide-forming metal Ni and single-crystalline SiC is developed on the basis of the mutual diffusion of components and the volume silicide-formation reaction. The model makes it possible to describe satisfactorily the basic...

  • Molecular dynamics modeling of the thermal conductivity of irradiated SiC as a function of cascade overlap. Crocombette, Jean-Paul; Dumazer, Guillaume; Hoang, Nguyen Quoc; Gao, Fei; Weber, William J. // Journal of Applied Physics;1/15/2007, Vol. 101 Issue 2, p023527 

    SiC thermal conductivity is known to decrease under irradiation. To understand this effect, we study the variation of the thermal conductivity of cubic SiC with defect accumulation induced by displacement cascades. We use an empirical potential of the Tersoff type in the framework of...

  • CN spectroscopy and physico-chemistry in the boundary layer of a C/SiC tile in a low pressure nitrogen/carbon dioxide plasma flow. Boubert, P.; Vervisch, P. // Journal of Chemical Physics;6/15/2000, Vol. 112 Issue 23 

    The boundary layer of a C/SiC tile in a low pressure nitrogen/carbon dioxide plasma flow is investigated by numerous measurement techniques. CN emission is especially studied through its red and violet systems. Radial and axial profiles of CN relative density are obtained and absolute values are...

  • Monte Carlo simulations of defect recovery within a 10 keV collision cascade in 3C–SiC. Rong, Zhouwen; Gao, Fei; Weber, William J.; Hobler, Gerhard // Journal of Applied Physics;Nov2007, Vol. 102 Issue 10, p103508 

    A kinetic lattice Monte Carlo (KLMC) model is developed to investigate the recovery and clustering of defects during annealing of a single 10 keV cascade in cubic silicon carbide. The 10 keV Si cascade is produced by molecular dynamics (MD), and a method of transferring the defects created by MD...

  • Hypersonic velocity impact on a-SiC target: A diagram of damage characteristics via molecular dynamics simulations. Makeev, Maxim A.; Srivastava, Deepak // Applied Physics Letters;4/14/2008, Vol. 92 Issue 15, p151909 

    Dynamic damage response characteristics of an amorphous silicon carbide target due to hypersonic velocity impacts of diamond projectiles are investigated using molecular dynamics simulations. In a certain range of radii of the projectile, four distinct regimes of damage are uncovered and...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics