TITLE

Hall mobility lowering in undoped n-type bulk GaAs due to cellular-structure related

AUTHOR(S)
Siegel, W.; Schulte, S.; K├╝hnel, G.; Monecke, J.
PUB. DATE
April 1997
SOURCE
Journal of Applied Physics;4/1/1997, Vol. 81 Issue 7, p3155
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Discusses the characteristic dependence of the Hall effect mobility on the carrier concentration in undoped n-type bulk gallium arsenide. Use of effective medium theory. Mesoscopic nonuniformities; Cellular structure of dislocations; Model calculations; Thermal activation energy.
ACCESSION #
129826

 

Share

Read the Article

Courtesy of

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics