Synthesis of uniform GaN quantum dot arrays via electron nanolithography of D2GaN3

Crozier, P.A.; Tolle, J.; Kouvetakis, J.; Ritter, Cole
May 2004
Applied Physics Letters;5/3/2004, Vol. 84 Issue 18, p3441
Academic Journal
We demonstrate the deposition of periodic arrays of uniformly sized GaN quantum dots onto a SiOx substrate. The dots are deposited using a nanolithography technique based on a combination of electron-beam-induced chemical vapor deposition and single-source molecular hydride chemistries. Under appropriate deposition conditions, we can deposit uniform dots of height 5 nm and full widths at half-maxima of 4 nm. The dot size is controlled by the spatial distribution of secondary electrons leaving the substrate surface. The smallest, most uniform void-free dots are created via nanolithography of molecules adsorbed on the substrate surface. © 2004 American Institute of Physics.


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