Impact of dislocations on minority carrier electron and hole lifetimes in GaAs grown on metamorphic SiGe substrates

Andre, C.L.; Boeckl, J.J.; Wilt, D.M.; Pitera, A.J.; Lee, M.L.; Fitzgerald, E.A.; Keyes, B.M.; Ringel, S.A.
May 2004
Applied Physics Letters;5/3/2004, Vol. 84 Issue 18, p3447
Academic Journal
The minority carrier lifetime of electrons (τn) in p-type GaAs double heterostructures grown on GaAs substrates and compositionally graded Ge/Si1-xGex/Si (SiGe) substrates with varying threading dislocation densities (TDDs) were measured at room temperature using time-resolved photoluminescence. The electron lifetimes for homoepitaxial GaAs and GaAs grown on SiGe (TDD∼1×106 cm-2) with a dopant concentration of 2×1017 cm-3 were ∼21 and ∼1.5 ns, respectively. The electron lifetime measured on SiGe was substantially lower than the previously measured minority carrier hole lifetime (τp) of ∼10 ns, for n-type GaAs grown on SiGe substrates with a similar residual TDD and dopant concentration. The reduced lifetime for electrons is a consequence of their higher mobility, which yields an increased sensitivity to the presence of dislocations in GaAs grown on metamorphic buffers. The disparity in dislocation sensitivity for electron and hole recombination has significant implications for metamorphic III-V devices. © 2004 American Institute of Physics.


Related Articles

  • Electrical and structural properties of dislocations confined in a InGaAs/GaAs heterostructure. Uchida, Y.; Kakibayashi, H.; Goto, S. // Journal of Applied Physics;12/1/1993, Vol. 74 Issue 11, p6720 

    Presents a study that examined the electrical and structural properties of dislocations confined in a InGaAs/gallium arsenide heterostructure. Methods for the preparation of the samples; Carrier concentration depth profile and distribution of dislocations at the interface; Analysis of electron...

  • Metamorphic Modulation-Doped InAlAs/InGaAs/InAlAs Heterostructures with High Electron Mobility Grown on GaAs Substrates. Semenova, E.S.; Zhukov, A.E.; Vasil'ev, A.P.; Mikhrin, S.S.; Kovsh, A.R.; Ustinov, V.M.; Musikhin, Yu.G.; Blokhin, S.A.; Gladyshev, A.G.; Ledentsov, N.N. // Semiconductors;Sep2003, Vol. 37 Issue 9, p1104 

    Metamorphic modulation-doped InGaAs/InAlAs heterostructures have been MBE-grown on GaAs substrates. The optimization of low-temperature growth conditions for a graded-composition buffer layer made it possible to reduce the amount of structural defects in the active layers of the structure. The...

  • Chloride vapor phase epitaxial growth of a Ga0.52In0.48P/GaAs heterostructure with an abrupt heterointerface. Hoshino, Masataka; Kodama, Kunihiko; Kitahara, Kuninori; Komeno, Junji; Ozeki, Masashi // Applied Physics Letters;4/14/1986, Vol. 48 Issue 15, p983 

    Chloride vapor phase epitaxy of Ga0.52In0.48P/GaAs was studied using a reactor with two growth chambers. We have obtained high-purity epitaxial layers of both GaInP and GaAs. For the growth of a heterostructure with an abrupt interface, the optimum growth condition was investigated in detail....

  • Very low current threshold GaAs/Al0.5Ga0.5As double-heterostructure lasers grown by chemical beam epitaxy. Tsang, W. T. // Applied Physics Letters;2/24/1986, Vol. 48 Issue 8, p511 

    The first device performance of GaAs/AlxGa1-xAs double-heterostructure lasers grown by chemical beam epitaxy (CBE) is reported. Very low averaged current threshold densities of ∼500 A/cm2 were obtained for wafers with active layer thicknesses of ∼500–1000 Å and confinement...

  • Organometallic vapor phase epitaxial growth of GaInP/GaAs (AlGaAs) heterostructures. Shealy, J. R.; Schaus, C. F.; Eastman, L. F. // Applied Physics Letters;1/20/1986, Vol. 48 Issue 3, p242 

    The growth of GaInP/AlGaAs heterostructures by organometallic vapor phase epitaxy is reported. It was observed that different GaInP alloy compositions are required to lattice match films to AlGaAs and GaAs buffer layers for optimum results. Quantum well heterostructures with GaInP regions as...

  • Growth velocity variations during metalorganic vapor phase epitaxy through an epitaxial shadow mask. Demeester, P.; Buydens, L.; Van Daele, P. // Applied Physics Letters;7/9/1990, Vol. 57 Issue 2, p168 

    A novel shadow masking technique is proposed for the local variation of growth velocity in GaAs/AlGaAs structures grown on GaAs by metalorganic vapor phase epitaxy. This mask makes use of epitaxially grown spacer and mask layers and windows in the mask are lithographically defined. This results...

  • Threading dislocation reduction mechanisms in low-temperature-grown GaAs. Mathis, S. K.; Wu, X.-H. // Journal of Applied Physics;11/1/1999, Vol. 86 Issue 9, p4836 

    Presents information on a study which investigated the role of low-temperature gallium arsenide growth in the reduction of threading dislocation (TD) densities in large mismatch heteroepitaxy. Modeling of TD reduction used on dislocation reactions; Origin of TD density asymmetry on gallium...

  • Breaking up of misfit dislocations in GaAs/In[sub 0.3]Ga[sub0.7]As/GaAs heterostructure. Wu, J.; Li, W. // Applied Physics Letters;8/7/1995, Vol. 67 Issue 6, p846 

    Investigates the misfit dislocation in indium[sub x]gallium[sub 1-x]/gallium arsenide heterostructure through transmission electron microscopy. Determination of the thickness of gallium arsenide cap layer; Configuration of the misfit dislocation; Component of indium gallium arsenide layer.

  • Electron velocity and negative differential mobility in AlGaAs/GaAs modulation-doped heterostructures. Masselink, W. T.; Braslau, N.; Wang, W. I.; Wright, S. L. // Applied Physics Letters;11/9/1987, Vol. 51 Issue 19, p1533 

    We have measured the electron velocity in low-doped GaAs and in AlGaAs/GaAs modulation-doped heterostructures at electric fields up to 8000 V/cm at both 300 and 77 K. In order to avoid the charge domain formation which occurs in dc measurements at these fields, this measurement uses 35 GHz...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics