Local built-in potential on grain boundary of Cu(In,Ga)Se2 thin films

Jiang, C.-S.; Noufi, R.; AbuShama, J.A.; Ramanathan, K.; Mountinho, H.R.; Pankow, J.; Al-Jassim, M.M.
May 2004
Applied Physics Letters;5/3/2004, Vol. 84 Issue 18, p3477
Academic Journal
We report on a direct measurement of two-dimensional potential distribution on the surface of photovoltaic Cu(In,Ga)Se2 thin films using a nanoscale electrical characterization of scanning Kelvin probe microscopy. The potential measurement reveals a higher surface potential or a smaller work function on grain boundaries of the film than on the grain surfaces. This demonstrates the existence of a local built-in potential on grain boundaries, and the grain boundary is positively charged. The local built-in potential on the grain boundary is expected to increase the minority-carrier collection area from one to three dimensional. In addition, a work function decrease induced by Na on the film surface was observed. © 2004 American Institute of Physics.


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