High doping incorporation on (311)B InP/InGaAs by metalorganic chemical vapor deposition and its application to tunnel junction fabrication

Yae L. Okuno, C.C.; DenBaars, Steven P.; Bowers, John E.
May 2004
Applied Physics Letters;5/3/2004, Vol. 84 Issue 18, p3483
Academic Journal
We investigated the doping characteristics of InP/InGaAs on the (311)B plane by metalorganic chemical vapor deposition using metalorganic group-V regents. For both n-type Si doping and p-type Zn doping, we found that dopant incorporation is higher on the (311)B plane than the (100) plane. Applying this result, we grew a tunnel junction on (311)B InP substrates at a constant growth temperature. The junction showed good current–voltage characteristics and is promising for device applications. © 2004 American Institute of Physics.


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