TITLE

Near-bandedge cathodoluminescence of an AlN homoepitaxial film

AUTHOR(S)
Silveira, E.; Freitas Jr., J.A.; Kneissl, M.; Treat, D.w.; Johnson, N.M.; Slack, G.A.; Schowalter, L.J.
PUB. DATE
May 2004
SOURCE
Applied Physics Letters;5/3/2004, Vol. 84 Issue 18, p3501
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Cathodoluminescence experiments were performed on a high-quality AlN epitaxial film grown by organometallic vapor phase epitaxy on a large single crystal AlN substrate. The low-temperature near-bandedge spectra clearly show six very narrow lines. The thermal quenching behavior of these emission lines provides insight on how to assign them to free and bound exciton recombination processes. The binding energy for the free-exciton-A in AlN was found to be nearly twice that in GaN. The observation of the free-exciton-A first excited state permitted us to estimate its reduced effective mass and, by using recent reported values for the hole effective mass in Mg-doped AlN, the electron effective mass in AlN has been deduced. © 2004 American Institute of Physics.
ACCESSION #
12930053

 

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