TITLE

Wafer-bonded semiconductors using In/Sn and Cu/Ti metallic interlayers

AUTHOR(S)
Shi, Frank; Hao Chen; MacLaren, Scott
PUB. DATE
May 2004
SOURCE
Applied Physics Letters;5/3/2004, Vol. 84 Issue 18, p3504
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
This work reports on the interface microstructures and interface electrical and optical properties of wafer-bonded semiconductors using In/Sn and Cu/Ti as the metallic interlayers. The interface microstructures of the wafer-bonded semiconductors were characterized using transmission electron microscopy and scanning electron microscopy. The interface imperfections and their potential influences on the interface electrical performances were discussed. The interface electrical and optical characteristics of the metal-bonded wafers were also compared with those of directly fused wafers. © 2004 American Institute of Physics.
ACCESSION #
12930052

 

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