Optical characterization of n- and p-doped 4H–SiC by electroreflectance spectroscopy

Demir, Gazi; Renfro, Timothy E.; Glosser, R.; Saddow, S.E.
May 2004
Applied Physics Letters;5/3/2004, Vol. 84 Issue 18, p3540
Academic Journal
We have studied the electroreflectance (ER) spectra of n- and p-type 4H–SiC polytype samples from 3 to 6.5 eV. The fundamental band gap and higher lying critical points are measured at room temperature. For this polytype, we observe band-gap narrowing in one of the structures with higher doping concentration. © 2004 American Institute of Physics.


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