TITLE

Sb-mediated growth of Si-doped AlGaAs by molecular-beam epitaxy

AUTHOR(S)
Sadofyev, Yu G.; Johnson, S.R.; Chaparro, S.A.; Cao, Y.; Ding, D.; Wang, J.-B.; Franzreb, K.; Zhang, Y.-H.
PUB. DATE
May 2004
SOURCE
Applied Physics Letters;5/3/2004, Vol. 84 Issue 18, p3546
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The Sb-mediated growth of Al0.65Ga0.35As is studied for Sb/III flux ratios from 0 to 2% and growth temperatures from 580 to 720 °C. The electrical properties and surface morphology are found to depend strongly on both the growth temperature and the Sb flux. As an isoelectronic dopant, Sb improves the conductivity of n-Al0.65Ga0.35As with the highest conductivities occurring at the highest growth temperatures. As a surfactant, Sb improves the surface morphology at all growth temperatures, with the most dramatic improvement occurring at 670 °C. The smoothest surface (0.2 nm rms roughness) was obtained at 700 °C using a Sb/III flux ratio of 0.02. Furthermore, we have demonstrated that the use of Sb during the molecular-beam-epitaxy growth of AlGaAs effectively eliminates the “forbidden temperature gap.” © 2004 American Institute of Physics.
ACCESSION #
12930038

 

Related Articles

  • Deep hole traps in Be-doped Al...Ga...As layers grown by molecular beam epitaxy. Szatkowski, J.; Hansen, O.P. // Journal of Applied Physics;8/1/1999, Vol. 86 Issue 3, p1433 

    Discusses a study on the deep hole traps in beryllium-doped aluminum-gallium arsenide grown by molecular beam epitaxy with the use of the deep-level transient-spectroscopy method. Experimental procedure; Results and discussions; Conclusions.

  • Anisotropic transport and nonparabolic miniband in a novel in-plane superlattice consisting of a grid-inserted selectively doped heterojunction. Motohisa, J.; Tanaka, M.; Sakaki, H. // Applied Physics Letters;9/18/1989, Vol. 55 Issue 12, p1214 

    Transport properties of electrons in a novel in-plane superlattice structure are studied and the field-effect transistor action has been demonstrated. The structure consists of an n-AlGaAs/GaAs modulation-doped heterojunction in which an array of monolayer-thick AlAs grid is embedded with an...

  • Transport properties of Mn δ-doped GaAs and the effect of selective doping. Nazmul, Ahsan M.; Sugahara, S.; Tanaka, M. // Applied Physics Letters;4/29/2002, Vol. 80 Issue 17, p3120 

    We have grown Mn δ-doped GaAs layers on GaAs(001) substrates by molecular beam epitaxy. Secondary ion mass spectroscopy and transmission electron microscopy revealed that Mn dopants were abruptly confined. The doping profiles still retained abruptness even at elevated growth temperature up to...

  • Doping of GaAs Layers with Si under Conditions of Low-Temperature Molecular Beam Epitaxy. Vilisova, M. D.; Kunitsyn, A. E.; Lavrent�eva, L. G.; Preobrazhenskii, V. V.; Putyato, M. A.; Semyagin, B. R.; Toropov, S. E.; Chaldyshev, V. V. // Semiconductors;Sep2002, Vol. 36 Issue 9, p953 

    Using the methods of X-ray diffraction, optical absorption in the near-infrared range, and the Hall effect, the influence of growth conditions on the structure and properties of Si-doped GaAs layers grown by low-temperature molecular-beam epitaxy was investigated. The relation between the...

  • Evidence for donor-gallium vacancy pairs in silicon doped GaAs grown by molecular beam epitaxy.... McQuaid, S.A.; Newman, R.C. // Applied Physics Letters;12/21/1992, Vol. 61 Issue 25, p3008 

    Explores the evidence for the presence of donor-gallium vacancy pair in silicon (Si) doped gallium arsenide (GaAs) grown at low temperature. Growth of GaAs by molecular beam epitaxy; Incorporation of Si on Ga sites during epitaxial growth of GaAs; Measurement of infrared absorption due to...

  • Sharp photoluminescence lines from nitrogen atomic-layer-doped GaAs. Makimoto, Toshiki; Kobayashi, Naoki // Applied Physics Letters;7/31/1995, Vol. 67 Issue 5, p688 

    Examines nitrogen doping of gallium arsenide (GaAs) grown by molecular beam epitaxy using nitrogen molecules cracked by tungsten filament. Comparison of photoluminescence lines (PL) between nitrogen-doped and nitrogen atomic-layer doped GaAs layers; Observation of the dominant PL; Analysis of...

  • Andreev reflection in Si-engineered Al/InGaAs hybrid junctions. De Franceschi, Silvano; Giazotto, Francesco; Beltram, Fabio; Sorba, Lucia; Lazzarino, Marco; Franciosi, Alfonso // Applied Physics Letters;12/28/1998, Vol. 73 Issue 26, p3890 

    Andreev-reflection dominated transport is demonstrated in Al/n-In[sub 0.38]Ga[sub 0.62]As superconductor–semiconductor junctions grown by molecular beam epitaxy on GaAs(001). High junction transparency was achieved in low-doped devices by exploiting Si interface bilayers to suppress the...

  • Molecular-beam epitaxy growth and in situ arsenic doping of p-on-n HgCdTe heterojunctions. Arias, Jose; Zandian, M.; Pasko, J. G.; Shin, S. H.; Bubulac, L. O.; DeWames, R. E.; Tennant, W. E. // Journal of Applied Physics;2/15/1991, Vol. 69 Issue 4, p2143 

    Presents information on a study which discussed results on the growth of in situ doped p-on-n heterojunctions on HgCdTe epilayers grown on (211)boron gallium arsenide substrates by molecular beam epitaxy (MBE). Discussion on the junction formation method; Summary of the heterostructure material...

  • Electron traps in AlGaAs grown by molecular-beam epitaxy. Yamanaka, K.; Naritsuka, S.; Kanamoto, K.; Mihara, M.; Ishii, M. // Journal of Applied Physics;6/1/1987, Vol. 61 Issue 11, p5062 

    Presents information on a study which investigated deep electron traps in n-aluminum gallium arsenide grown by molecular-beam epitaxy using deep-level transient capacitance spectroscopy. Methodology of the study; Results and discussion; Conclusion.

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics