TITLE

Formation mechanism of wide stacking faults in nanocrystalline Al

AUTHOR(S)
Liao, X.Z.; Srinivasan, S.G.; Zhao, Y.H.; BAskes, M.I.; Zhu, Y.T.; Zhou, F.; Lavernia, E.J.; Xu, H.F.
PUB. DATE
May 2004
SOURCE
Applied Physics Letters;5/3/2004, Vol. 84 Issue 18, p3564
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A full dislocation often dissociates into two partial dislocations enclosing a stacking fault (SF) ribbon. The SF width significantly affects the mechanical behavior of metals. Al has very high stacking fault energy and, consequently, very narrow SF width in its coarse-grained state. We have found that some SFs in nanocrystalline Al are surprisingly 1.4–6.8 nm wide, which is 1.5–11 times higher than the reported experimental value in single crystal Al. Our analytical model shows that such wide SFs are formed due to the small grain size and possibly also to the interaction of SF ribbons with high density of dislocations. © 2004 American Institute of Physics.
ACCESSION #
12930032

 

Related Articles

  • Dislocation imaging using transmission ion channeling. Breese, M. B. H.; King, P. J. C.; Whitehurst, J.; Booker, G. R.; Grime, G. W.; Watt, F.; Romano, L. T.; Parker, E. H. C. // Journal of Applied Physics;3/15/1993, Vol. 73 Issue 6, p2640 

    Presents a study which explored the imaging of interface dislocations present in a Si[sub0.85]Ge[sub0.15]/silicon sample using the channeling scanning transmission ion microscopy method. Theoretical background; Computational approach; Results.

  • Threading dislocation reduction in strained layers. Romanov, A. E.; Pompe, W. // Journal of Applied Physics;1/1/1999, Vol. 85 Issue 1, p182 

    Considers different types of dislocations developed from the threading dislocation (TD) model. Annihilation reactions of mobile TD; TD reduction through the introduction of a strained layer; Approaches used in the treatment of strained layers.

  • High-temperature tensile tests and activation volume measurement of free-standing submicron Al films. Kalkman, A. J.; Verbruggen, A. H.; Radelaar, S. // Journal of Applied Physics;12/1/2002, Vol. 92 Issue 11, p6612 

    Tensile tests on free-standing, 200-nm-thick A1 films were conducted between room temperature and 200 °C. Applied strain rates were in the range 1 × 10[sup -8]-2 × 10[sup -6]/s. At a temperature of 200 °C a saturation of the flow stress was observed. The strain required to achieve...

  • Oscillations of the plastic wave front under high‐rate loading. Meshcheryakov, Yu. I.; Savenkov, G. G. // Journal of Applied Mechanics & Technical Physics;Nov/Dec2001, Vol. 42 Issue 6, p1023 

    Two models of elastoplastic wave propagation in metals under uniaxial deformation are considered. The first model treats plastic deformation as being due to dislocation motion during heterogeneous formation of dislocations. The second model assumes that plastic deformation occurs by motion of...

  • Dislocation Boundary Structure from Low to Medium Strain of Cold Rolling AA3104 Aluminum Alloy. Zongyong Yao; Guangjie Huang; Godfrey, Andrew; Wei Liu; Qing Liu // Metallurgical & Materials Transactions. Part A;Jun2009, Vol. 40 Issue 6, p1487 

    The evolution of the dislocation boundary structure during the cold rolling of the AA3104 aluminum alloy has been investigated using electron channeling contrast (ECC) imaging and electron backscattered diffraction (EBSD) techniques. The results show that there is a strong correlation between...

  • Shockley partial dislocations to twin: Another formation mechanism and generic driving force. Wang, Jian; Huang, Hanchen // Applied Physics Letters;12/13/2004, Vol. 85 Issue 24, p5983 

    We report a mechanism of twin formation from two Shockley partial dislocations on non-neighboring glide planes. Further, we correlate the driving force of twin nucleation with the local stress of large magnitude. Using the embedded atom method potential for atomic interactions, our molecular...

  • Thin strained layers inserted in compositionally graded SiGe buffers and their effects on strain relaxation and dislocation. Park, J.-S.; Curtin, M.; Bai, J.; Bengtson, S.; Carroll, M.; Lochtefeld, A. // Journal of Applied Physics;3/1/2007, Vol. 101 Issue 5, p053501 

    The effect of inserting compressively or tensely strained layers into compositionally graded SiGe buffers on strain relaxation and threading dislocation density (TDD) was investigated. The samples having compressively strained layers showed lower TDD and more enhanced relaxation than those...

  • Fivefold twins or disclinations? (Discussion). Krishtal, M.M. // Metal Science & Heat Treatment;Mar2007, Vol. 49 Issue 3/4, p108 

    The article discusses that the cyclic fivefold twin structures in the metal science research paper by I. S. Yasnikov and A. A. Vikarchuk are also partial disclination. Disclination is a commonly used term for rotational Volterra dislocations. The term reflects the technique of obtaining a wedge...

  • Atomistic modeling of shock-induced void collapse in copper. Dávila, L. P.; Erhart, P.; Bringa, E. M.; Meyers, M. A.; Lubarda, V. A.; Schneider, M. S.; Becker, R.; Kumar, M. // Applied Physics Letters;4/18/2005, Vol. 86 Issue 16, p161902 

    Nonequilibrium molecular-dynamics (MD) simulations show that shock-induced void collapse in copper occurs by emission of shear loops. These loops carry away the vacancies which comprise the void. The growth of the loops continues even after they collide and form sessile junctions, creating a...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics