Gated-mode single-photon detection at 1550 nm by discharge pulse counting

Yoshizawa, Akio; Kaji, Ryosaku; Tsuchida, Hidemi
May 2004
Applied Physics Letters;5/3/2004, Vol. 84 Issue 18, p3606
Academic Journal
Gated-mode single-photon detection using an avalanche photodiode is characterized by charge and discharge pulses, which are attributable to capacitive behavior. In this letter, the discharge pulse rather than the photon-induced avalanche pulse is counted in single-photon detection, in order to reduce after pulses. A demonstration adopts an indium–gallium–arsenide avalanche photodiode operating at 1550 nm. After-pulse probability per gate is evaluated at a repetition frequency of 5 MHz. © 2004 American Institute of Physics.


Related Articles

  • Multi-gigahertz operation of photon counting InGaAs avalanche photodiodes. Yuan, Z. L.; Sharpe, A. W.; Dynes, J. F.; Dixon, A. R.; Shields, A. J. // Applied Physics Letters;2/15/2010, Vol. 96 Issue 7, p071101 

    We report a 2 GHz operation of InGaAs avalanche photodiodes for efficient single photon detection at telecom wavelengths. Employing a self-differencing circuit that incorporates tuneability in both frequency and arm balancing, extremely weak avalanches can now be sensed so as to suppress...

  • Dark current and diffusion length in InGaAs photodiodes grown on GaAs substrates. Ishimura, E.; Kimura, T.; Shiba, T.; Mihashi, Y.; Namizaki, H. // Applied Physics Letters;2/12/1990, Vol. 56 Issue 7, p644 

    In0.53Ga0.47As photodiodes grown on GaAs substrates have been fabricated and analyzed. The dislocation density in the InGaAs layer is 2×107 cm-2. A lowest dark current of 3.8×10-4 A/cm2 at 10 V bias is obtained, which is very stable during a bias-temperature test of Vb=-10 V, T=175...

  • An all optically driven integrated deformable mirror device. Mathur, V.; Vangala, S. R.; Qian, X.; Goodhue, W. D.; Haji-Saeed, B.; Khoury, J. // Applied Physics Letters;5/24/2010, Vol. 96 Issue 21, p211103 

    We demonstrate a technique for actuating micromirrors vertically cascaded on wafer fused GaAs-GaP photodiodes. Unlike traditional actuation schemes, the electrostatic drive of the individual capacitive actuators is addressed optically in this device. Vertical mirror displacements of up to 500 nm...

  • Realization and analysis of GaAs/AlAs/In0.1Ga0.9As based resonant tunneling diodes with high peak-to-valley ratios at room temperature. Kapre, R.; Madhukar, A.; Kaviani, K.; Guha, S.; Rajkumar, K. C. // Applied Physics Letters;3/5/1990, Vol. 56 Issue 10, p922 

    Investigations of pseudomorphic resonant tunneling diodes based on the GaAs/AlAs/In0.1Ga0.9As material system reveal that the use of undoped In0.1Ga0.9As spacer layers gives rise to a significantly enhanced peak-to-valley ratio of 3.2 and 14 at 300 and 77 K, respectively, as opposed to 2 and 5...

  • Photon antibunching at high temperature from a single InGaAs/GaAs quantum dot. Mirin, Richard P. // Applied Physics Letters;2/23/2004, Vol. 84 Issue 8, p1260 

    We report the observation of photon antibunching from a single, self-assembled InGaAs/GaAs quantum dot at temperatures up to 135 K. The second-order intensity correlation, g[sup (2)](0), is measured to be less than 0.260 for temperatures up to 100 K. At 120 K, g[sup (2)](0) increases to about...

  • Indistinguishable photons from a diode. Bennett, A. J.; Patel, R. B.; Shields, A. J.; Cooper, K.; Atkinson, P.; Nicoll, C. A.; Ritchie, D. A. // Applied Physics Letters;5/12/2008, Vol. 92 Issue 19, p194102 

    We generate indistinguishable photons from a semiconductor diode containing an InGaAs/GaAs quantum dot. By using an all-electrical technique to populate and control a single-photon emitting state, we filter out dephasing by Stark shifting the emission energy on time scales below the dephasing...

  • Effect of growth interruption time and growth temperature on the natural formation of... Ogawa, Tomoya; Akabori, Masashi // Journal of Applied Physics;1/15/2000, Vol. 87 Issue 2, p745 

    Presents information on a study which examined the effect of growth interruption time and growth temperature on the natural formation of indium-gallium arsenide/aluminum-gallium arsenide quantum disk structures by metalorganic vapor phase epitaxy. Experimental procedure; Results and discussion;...

  • X-ray diffraction characterization of highly strained InAs and GaAs layers on InP grown by metalorganic vapor-phase epitaxy. Liu, Q.; Lindner, A.; Scheffer, F.; Prost, W.; Tegude, F. J. // Journal of Applied Physics;3/1/1994, Vol. 75 Issue 5, p2426 

    Studies the use of high resolution x-ray diffraction thin indium arsenide and gallium arsenide layers grown on InP substrates by low-pressure metalorganic vapor-phase epitaxy. Growth parameter and structural parameter of the investigated samples; Superlattice periods determined from the...

  • Impurity reduction in In[sub 0.53]Ga[sub 0.47]As layers grown by liquid phase epitaxy using Er-treated melts. Dhar, S.; Paul, Shampa; Kulkarni, V. N. // Applied Physics Letters;3/20/2000, Vol. 76 Issue 12, p1588 

    Hall mobility and carrier concentration measurements are done on In[sub 0.53]Ga[sub 0.47]As layers grown by liquid phase epitaxy from melts containing 0.1-0.18 wt % Er. The carrier concentration in the layer decreased to 2x10[sup 14] cm[sup -3] upon the addition of 0.16 wt % Er to the growth...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics