Heteroepitaxal fabrication and structural characterizations of ultrafine GaN/ZnO coaxial nanorod heterostructures

Sung Jin An; Won Il Park, Dragan; Gyu-Chul Yi; Yong-Jin Kim; Hee-Bok Kang, Dragan; Miyoung Kim, Dragan
May 2004
Applied Physics Letters;5/3/2004, Vol. 84 Issue 18, p3612
Academic Journal
We report on heteroepitaxial fabrication and structural characterizations of ultrafine GaN/ZnO coaxial nanorod heterostructures. The coaxial nanorod heterostructures were fabricated by epitaxial growth of a GaN layer on ultrafine ZnO nanorods. Epitaxial growth and precise control of GaN overlayer thickness were obtained by low pressure metalorganic vapor-phase epitaxy. ZnO nanorods grown on Si and sapphire substrates using catalyst-free metalorganic chemical vapor deposition exhibited diameters as small as 7 nm. Furthermore, structural properties of the coaxial nanorod heterostructures were investigated using both synchrotron-radiation x-ray diffraction and high resolution transmission electron microscopy. © 2004 American Institute of Physics.


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