TITLE

Heteroepitaxal fabrication and structural characterizations of ultrafine GaN/ZnO coaxial nanorod heterostructures

AUTHOR(S)
Sung Jin An; Won Il Park, Dragan; Gyu-Chul Yi; Yong-Jin Kim; Hee-Bok Kang, Dragan; Miyoung Kim, Dragan
PUB. DATE
May 2004
SOURCE
Applied Physics Letters;5/3/2004, Vol. 84 Issue 18, p3612
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report on heteroepitaxial fabrication and structural characterizations of ultrafine GaN/ZnO coaxial nanorod heterostructures. The coaxial nanorod heterostructures were fabricated by epitaxial growth of a GaN layer on ultrafine ZnO nanorods. Epitaxial growth and precise control of GaN overlayer thickness were obtained by low pressure metalorganic vapor-phase epitaxy. ZnO nanorods grown on Si and sapphire substrates using catalyst-free metalorganic chemical vapor deposition exhibited diameters as small as 7 nm. Furthermore, structural properties of the coaxial nanorod heterostructures were investigated using both synchrotron-radiation x-ray diffraction and high resolution transmission electron microscopy. © 2004 American Institute of Physics.
ACCESSION #
12930016

 

Related Articles

  • Homoepitaxy of GaN on polished bulk single crystals by metalorganic chemical vapor deposition. Ponce, F.A.; Bour, D.P. // Applied Physics Letters;2/12/1996, Vol. 68 Issue 7, p917 

    Examines the homoepitaxy of gallium nitride (GaN) on polished bulk single crystals by metalorganic chemical vapor deposition. Analysis on the structure of GaN single crystals; Origin of the dislocation loops; Use of transmission electron microscopy to study the epilayers.

  • A study of 2DEG properties in AlGaN/GaN heterostructure using GaN/AlN superlattice as barrier layers grown by MOCVD. Chen, Fangsheng; Chen, Hong; Deng, Zhen; Lu, Taiping; Fang, Yutao; Jiang, Yang; Ma, Ziguang; He, Miao // Applied Physics A: Materials Science & Processing;Mar2015, Vol. 118 Issue 4, p1453 

    GaN/AlN superlattice (SL) structures working as quasi-AlGaN barrier layers for GaN-based high electron mobility transistor have been grown by metal-organic chemical vapor deposition. The influences of the SL period thickness on the electrical properties of two-dimensional electron gas (2DEG)...

  • High quality InN/GaN heterostructures grown by migration enhanced metalorganic chemical vapor deposition. Fareed, R.S. Qhalid; Jain, R.; Gaska, R.; Shur, M.S.; Wu, J.; Walukiewicz, W.; Khan, M. Asif // Applied Physics Letters;3/15/2004, Vol. 84 Issue 11, p1892 

    We report on the structural properties and optical and electrical characteristics of InN epitaxial layers grown on highly resistive GaN templates using migration enhanced metalorganic chemical vapor deposition (MEMOCVD). The material quality of InN improved significantly for the layer thickness...

  • V-shaped defects connected to inversion domains in AlGaN layers. Pécz, B.; Makkai, Zs.; di Forte-Poisson, M. A.; Huet, F.; Dunin-Borkowski, R. E. // Applied Physics Letters;3/12/2001, Vol. 78 Issue 11, p1529 

    Thick AlGaN layers and AlGaN/GaN superlattices have been grown on GaN using metalorganic chemical vapor deposition. Cross-sectional transmission electron microscopy has been used to show that V-shaped surface pits on these samples differ from similar features observed in the InGaN system....

  • Comparison of the properties of GaN grown on complex Si-based structures. Zhou, S. Q.; Vantomme, A.; Zhang, B. S.; Yang, H.; Wu, M. F. // Applied Physics Letters;2/21/2005, Vol. 86 Issue 8, p081912 

    The article states that due to the potential integration of microelectronics and optoelectronics, the growth of Gallium nitride (GaN) on silicon (Si) substrates attracts a lot of attention. A major challenge in the growth of GaN on Si is the large mismatch of the in-plane thermal expansion...

  • Thermal stability of metal organic vapor phase epitaxy grown AlInN. Gadanecz, A.; Bläsing, J.; Dadgar, A.; Hums, C.; Krost, A. // Applied Physics Letters;5/28/2007, Vol. 90 Issue 22, p221906 

    AlInN layers with a thickness of 100 nm were grown by metal organic vapor phase epitaxy on GaN buffer layers on Si(111) substrates. By varying the growth temperature, In and NH3 flows, and reactor pressure, three series with different In contents were produced and thermally treated in the...

  • Growth of device quality GaN at 550 degrees C by atomic layer epitaxy. Karam, N.H.; Parodos, T. // Applied Physics Letters;7/3/1995, Vol. 67 Issue 1, p94 

    Presents the initial optical and electrical results for gallium nitride crystal films grown at low temperature using atomic layer epitaxy. Use of metalorganic chemical vapor deposition in achieving sufficient cracking of NH[sub 3]; Effect of low growth temperature on GaN; Regulation of the film...

  • High-quality coalescence of laterally overgrown GaN stripes on GaN/sapphire seed layers. Fini, P.; Zhao, L.; Moran, B.; Hansen, M.; Marchand, H.; Ibbetson, J.P.; DenBaars, S.P.; Mishra, U.K.; Speck, J.S. // Applied Physics Letters;9/20/1999, Vol. 75 Issue 12, p1706 

    Studies gallium nitride grown by lateral epitaxial overgrowth on large-area SiO[sub 2]/GaN/Al[sub 2]O[sub 3] wafers by low-pressure metalorganic chemical vapor deposition before and after coalescence. Magnitude of defects when wings from neighboring stripes coalesce; Peak splitting due to tilt;...

  • GaN growth on Si(111) substrate using oxidized AlAs as an intermediate layer. Kobayashi, N.P.; Kobayashi, J.T. // Applied Physics Letters;12/15/1997, Vol. 71 Issue 24, p3569 

    Examines the epitaxial growth of gallium nitride (GaN) on Si(111) substrate using oxidized AlAs as an intermediate layer. Use of atmospheric pressure metalorganic chemical vapor deposition on an aluminum oxide compound layer; Growth of a single-crystal hexagonal GaN; Evidence on a unique...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics