TITLE

Double-transconductance-plateau characteristics in InGaAs/GaAs real-space transfer high-electron-mobility transistor

AUTHOR(S)
Ching-Sung Lee, Anne; Wei-Chou Hsu
PUB. DATE
May 2004
SOURCE
Applied Physics Letters;5/3/2004, Vol. 84 Issue 18, p3618
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Bias-tunable double-transconductance-plateau characteristics due to real-space transfer through the lowering of conduction band offset at high electric fields in a δ-doped InGaAs/GaAs high-electron-mobility transistor have been observed. Extrinsic, unpassivated peak performance values, with gate dimensions of 1×125 μm2, include the transconductance plateaus of 269 and 116 mS/mm at VDS=3 V for VGS=0 V and -1.5 V, respectively, maximum drain current density of 382 mA/mm at VDS=5.5 V, unity current gain cutoff frequency of 15.5 GHz, and maximum frequency of oscillation of 23 GHz. The present structure is promising for high-speed analog-to-digital converters or multiple-state quantizer applications. © 2004 American Institute of Physics.
ACCESSION #
12930014

 

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