High-frequency small-signal conductivity of hot electrons in nitride semiconductors

Sokolov, V.N.; Kim, K.W.; Kochelap, V.A.; Woolard, D.L.
May 2004
Applied Physics Letters;5/3/2004, Vol. 84 Issue 18, p3630
Academic Journal
We investigate the small-signal conductivity of the electrons in group-III nitrides under a high steady-state electric field. The resulting calculation indicates a frequency dependence of the conductivity that is drastically different from that given by the Drude formula. A large and very fast response of the hot electrons in the nitrides is revealed. The complex conductivity is found to be finite up to the frequency of about 10 THz. For the fields above the threshold corresponding to the peak drift velocity, the calculation also predicts a frequency interval with a negative conductivity. A detailed analysis is provided on the field and frequency dependence of the dynamic conductivity at the high electric fields. © 2004 American Institute of Physics.


Related Articles

  • Hot electrons in group-III nitrides at moderate electric fields. Barry, E. A.; Kim, K. W.; Kochelap, V. A. // Applied Physics Letters;4/1/2002, Vol. 80 Issue 13, p2317 

    By the use of the Monte Carlo method, we studied the distribution function and the basic characteristics of hot electrons in InN, GaN, and AlN under moderate electric fields. We found that in relatively low fields (of the order of kV/cm) the optical phonon emission dominates in the electron...

  • Hot-electron velocity overshoot in Ga0.47In0.53As. Ghosal, A.; Chattopadhyay, D.; Purkait, N. N. // Applied Physics Letters;1984, Vol. 44 Issue 8, p773 

    Velocity overshoot phenomena in Ga0.47In0.53As to the application of uniform electric fields are investigated using recent values of the material parameters. The effects of the ambient temperature and of the doping concentration are studied. The material is found to yield peak drift velocities...

  • Differential Conductivity at the Transverse Runaway of Hot Electrons. Kachlishvili, Z. S.; Metreveli, N. K.; Chumburidze, F. G. // Technical Physics;May2000, Vol. 45 Issue 5, p571 

    Differential conductivity under the transverse runaway of hot electrons is investigated. Quasi-elastic scattering and electronic-temperature approximations are considered for equilibrium and heated phonon subsystem. In both approximations, the differential conductivity is shown to tend to...

  • A Raman scattering-based method to probe the carrier drift velocity in semiconductors: Application to gallium nitride. Andrade-Neto, A.V.; Vasconcellos, A.R.; Luzzi, R.; Freire, V.N. // Applied Physics Letters;11/1/2004, Vol. 85 Issue 18, p4055 

    A single expression relating the carrier drift velocity in semiconductors under an electric field to Raman scattering data is derived resorting to a full nonequilibrium picture for electrons and holes. It allows one to probe with high optical precision both the ultrafast transient as well as the...

  • Differential Conductivity under Conditions of Transverse Runaway of Hot Electrons in Arbitrarily Oriented Electric and Magnetic Fields. Kachlishvili, Z. S.; Metreveli, N. K.; Chumburidze, F. G. // Technical Physics Letters;Sep2002, Vol. 28 Issue 9, p782 

    Behavior of the differential conductivity under conditions of the transverse runaway (TR) of hot electrons is studied in the quasielastic scattering approximation in the presence of a magnetic field oriented at an angle to the electric field. It is shown that the differential conductivity...

  • Hot phonons in Si-doped GaN. Liberis, J.; Ramonas, M.; Kiprijanovic, O.; Matulionis, A.; Goel, N.; Simon, J.; Wang, K.; Xing, H.; Jena, D. // Applied Physics Letters;11/13/2006, Vol. 89 Issue 20, p202117 

    Microwave noise and electron transport are studied in silicon-doped GaN channels grown by molecular beam epitaxy and subjected to a high electric field. The drift velocity of 2.8×107 cm/s is reached at 290 kV/cm for n∼1×1018 cm-3 channel. No negative differential resistance is...

  • Investigation of the source-side injection characteristic of a dopant-segregated Schottky barrier metal-oxide-semiconductor field-effect-transistor. Sungho Kim; Sung-Jin Choi; Moongyu Jang; Yang-Kyu Choi // Applied Physics Letters;8/10/2009, Vol. 95 Issue 6, p063508 

    A unique characteristic of hot electron injection from the source side in a dopant-segregated Schottky barrier (DSSB) metal-oxide-semiconductor field-effect-transistor is investigated. A hot electron injection triggered by the sharp energy band bending near the source-side Schottky barrier is...

  • Bipolar charge transport, injection, and trapping studies in a model green-emitting polyfluorene copolymer. Poplavskyy, Dmitry; Su, Wencheng; So, Franky // Journal of Applied Physics;7/1/2005, Vol. 98 Issue 1, p014501 

    Experimental studies of charge injection and transport of holes and electrons in LUMATIONâ„¢ Green 1300 Series light-emitting polymer (LEP) by a combination of experimental techniques are reported. It is found that hole mobility is lower than electron mobility and the former exhibits steeper...

  • Emission from Hot Charge Carriers during the Formation of High-Field Autosolitons in Electron–Hole Plasma in n-Ge. Vinoslavskiı, M. N.; Kravchenko, A. V. // Semiconductors;Apr2001, Vol. 35 Issue 4, p377 

    The evolution of the spatial distribution of photogenerated electron-hole plasma in n-Ge samples during charge-carrier heating by an electric field at T = 77 K was studied. A multiprobe system was used, and the infrared emission from the sample in the wavelength range of λ = 1.65-10 µm was...


Read the Article

Courtesy of

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics