TITLE

Light-modulated scanning tunneling spectroscopy for nanoscale imaging of surface photovoltage

AUTHOR(S)
Takeuchi, Osamu; Yoshida, Shoji; Shigekawa, Hidemi
PUB. DATE
May 2004
SOURCE
Applied Physics Letters;5/3/2004, Vol. 84 Issue 18, p3645
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Light-modulated scanning tunneling spectroscopy (LM–STS) is proposed as a useful method for investigating spatially resolved surface photovoltage (SR–SPV). LM–STS provides the dependences of SR–SPV on bias voltage under constant tip-sample distance simultaneously with the entire dark/illuminated I–V curves. With this method, it is shown that SPV of a metallic Si(111) surface can be bias-dependent and SPV at zero bias voltage for Si(001) can be tip-sample-distance-dependent under conditions of small tip-sample distance and high illumination intensity. The importance of the experimental condition for interpreting experimentally obtained SR–SPV was suggested. © 2004 American Institute of Physics.
ACCESSION #
12930005

 

Related Articles

  • Growth of a-few-atom wide nanowires with different surface reconstructions via desorption of Au on vicinal Si (111) surfaces. Das, Debolina; Mahato, J. C.; Batabyal, R.; Banu, Nasrin; Bisi, Bhaskar; Dev, B. N. // AIP Conference Proceedings;Jun2013, Vol. 1536 Issue 1, p377 

    We present scanning tunneling microscopy studies of adsorption and desorption of Au on vicinal Si (111) - 7×7 (4° miscut) surfaces. The Au film transforms into percolated structures due to annealing at 400 °C. On annealing at 800 °C, the Au film is found to evaporate completely from...

  • Atomically resolved scanning tunneling microscopy of hydrogen-terminated Si(001) surfaces after HF cleaning. Arima, Kenta; Endo, Katsuyoshi; Kataoka, Toshihiko; Oshikane, Yasushi; Inoue, Haruyuki; Inouye, Haruyuki; Mori, Yuzo // Applied Physics Letters;1/24/2000, Vol. 76 Issue 4 

    Atomic structures of hydrogen-terminated Si(001) surfaces after HF cleaning are investigated by scanning tunneling microscopy. It is revealed that the surface is macroscopically rough but is composed of terraces and steps. Inside a terrace, 1x1 structures are formed. This corresponds to the...

  • Scanning tunneling microscopy investigations of the Si(111) topography produced by etching in.... Hsiao, Gregor S.; Virtanen, Jorma A.; Penner, Reginald M. // Applied Physics Letters;8/23/1993, Vol. 63 Issue 8, p1119 

    Investigates the time evolution of the topography of an oxidized silicon (Si) surface immersed in an aqueous 40% NH[sub 4]F etching solution. Use of scanning tunneling microscopy; Production of Si pillars at shielded surface locations; Suppression of gas evolution and roughening by reductant...

  • Causes of the Stability of Three-Bilayer Islands and Steps on a Si (111) Surface. Zverev, A. V.; Neizvestny, I. G.; Reızvikh, I. A.; Romanyuk, K. N.; Teys, S. A.; Shwartz, N. L.; Yanovitskaya, Z. Sh. // Semiconductors;Aug2005, Vol. 39 Issue 8, p967 

    The initial stages of growth of Ge and Si layers on a singular Si (111) surface result in an unusual morphology of the growth surface if the layers are deposited at a low rate; i.e., triangular islands with a height of as much as three atomic layers are formed. A simulation based on the Monte...

  • Single P and As dopants in the Si(001) surface. Radny, M. W.; Smith, P. V.; Reusch, T. C. G.; Warschkow, O.; Marks, N. A.; Shi, H. Q.; McKenzie, D. R.; Schofield, S. R.; Curson, N. J.; Simmons, M. Y. // Journal of Chemical Physics;11/14/2007, Vol. 127 Issue 18, p184706 

    Using first-principles density functional theory, we discuss doping of the Si(001) surface by a single substitutional phosphorus or arsenic atom. We show that there are two competing atomic structures for isolated Si–P and Si–As heterodimers, and that the donor electron is...

  • Atomic scale characterization of Mn doped InAs/GaAs quantum dots. Bozkurt, M.; Grant, V. A.; Ulloa, J. M.; Campion, R. P.; Foxon, C. T.; Marega Jr., E.; Salamo, G. J.; Koenraad, P. M. // Applied Physics Letters;1/25/2010, Vol. 96 Issue 4, p042108 

    Several growth procedures for doping InAs/GaAs quantum dots (QDs) with manganese (Mn) have been investigated with cross-sectional scanning tunneling microscopy. It is found that expulsion of Mn out of the QDs and subsequent segregation makes it difficult to incorporate Mn in the QDs even at low...

  • Scanning tunneling microscope study of microcrystalline silicon surfaces in air. Tanaka, Ichiro; Osaka, Fukunobu; Kato, Takashi; Katayama, Yoshifumi; Muramatsu, Shin-ichi; Shimada, Toshikazu // Applied Physics Letters;1/30/1989, Vol. 54 Issue 5, p427 

    Surfaces of microcrystalline silicon films prepared by the glow discharge method have been investigated by a scanning tunneling microscope (STM) in air. Grain-like structures of 30–80 nm size which correspond to transmission electron microscope data have been observed. The film surface...

  • Self-organized Growth of Cobalt Nanostructures on Ag/Si (111)-7×7 Surfaces. Batabyal, R.; Mahato, J. C.; Roy, A.; Dev, B. N. // AIP Conference Proceedings;7/16/2011, Vol. 1349 Issue 1, p741 

    Epitaxial growth of cobalt islands on nonreactive metal/semiconductor surface has been investigated in-situ by scanning tunneling microscopy (STM). When 1.6×1013 Co atoms/cm2 are deposited on a pre-deposited Ag (7.5×1014 atoms/cm2) on Si (111)-(7×7) surface at room temperature,...

  • Morphology, bond saturation and reconstruction of hexagonal SiC surfaces. Starke, U.; Schardt, J.; Franke, M. // Applied Physics A: Materials Science & Processing;1997, Vol. 65 Issue 6, p587 

    The atomic structure of silicon carbide (SiC) surfaces in hexagonal orientation is investigated with the main emphasis put on surface morphology and dangling-bond saturation either by adspecies or by surface reconstruction. By using quantitative low-energy electron diffraction (LEED) intensity...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics