TITLE

Ferroelectric properties of La and Zr substituted Bi4Ti3O12 thin films

AUTHOR(S)
Wang, S.T.; Chen, Y.F.; Wang, J.; Cheng, G.X.; Liu, Z.G.; Ming, N.B.
PUB. DATE
May 2004
SOURCE
Applied Physics Letters;5/3/2004, Vol. 84 Issue 18, p3660
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Thin films of A-site substituted, B-site substituted, and both A- and B-sites cosubstituted Bi4Ti3O12 (BTO) by La3+ and Zr4+, i.e., Bi3.25La0.75Ti3O12 (BLT), Bi4Ti2.8Zr0.2O12 (BTZ), and Bi3.25La0.75Ti2.8Zr0.2O12 (BLTZ), were fabricated on Pt/Ti/SiO2/Si substrates by pulsed laser deposition. Structures of the films are investigated by x-ray diffraction, Raman spectroscopy, and scanning electron microscopy. Compared to the well known BLT films, both the BTZ and BLTZ films have larger remanent polarization (Pr) but smaller coercive field (Ec). It is shown experimentally that the oxygen vacancy is the predominant factor determining ferroelectric fatigue. The effects of substitution on structural and ferroelectric properties of BTO are discussed in detail. As a result, the A- and B-sites cosubstitution might be one of the promising ways to improve ferroelectric properties of BTO. © 2004 American Institute of Physics.
ACCESSION #
12930000

 

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