Visible light-emitting diodes using a-plane GaN–InGaN multiple quantum wells over r-plane sapphire

Chitnis, Ashay; Changqing Chen; Adivarahan, Vinod; Shatalov, Maxim; Kuokstis, Edmundas; Mandavilli, Vasavi; Jinwei Yang; Asif Khan, M.
May 2004
Applied Physics Letters;5/3/2004, Vol. 84 Issue 18, p3663
Academic Journal
We report blue-purple pn-junction light-emitting diodes (LEDs) with a-plane GaN–InGaN multiple quantum well active region. The LEDs were grown over r-plane sapphire substrates. Our study has shown the low pump intensity photoluminencence and electroluminescence to be dominated by emission from the band-tail states which then saturates rapidly giving rise to band-edge emission. © 2004 American Institute of Physics.


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