TITLE

Leakage behavior of the quasi-superlattice stack for multilevel charge storage

AUTHOR(S)
Chang, T.C.; Yan, S.T.; Liu, P.T.; Chen, C.W.; Wu, H.H.; Sze, S.M.
PUB. DATE
May 2004
SOURCE
Applied Physics Letters;5/3/2004, Vol. 84 Issue 18, p3687
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The leakage behavior of the quasi-superlattice structure has been characterized by current–voltage measurements at room temperature and 50 K. A resonant tunnelinglike leakage characteristic is observed at low temperature. The resonant tunneling occurs at around 2, 5.2, and 7 V under a gate voltage swept from 0 to 10 V. A concise physical model is proposed to characterize the leakage mechanism of tunneling for the quasi-lattice structure and suggests that the considerations of the operating voltage for the two-bit per cell nonvolatile-memory device need to be taken into account. © 2004 American Institute of Physics.
ACCESSION #
12929991

 

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