TITLE

Continuous-wave operation of distributed feedback interband cascade lasers

AUTHOR(S)
Yang, Rui Q.; Hill, C.J.; Yang, B.H.; Wong, C.M.; Muller, R.E.; Echtermach, P.M.
PUB. DATE
May 2004
SOURCE
Applied Physics Letters;5/3/2004, Vol. 84 Issue 18, p3699
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Continuous-wave distributed feedback interband cascade lasers operating near 3.3 μm are reported. Single longitudinal mode emission is achieved with side mode suppression ratio greater than 30 dB at temperatures up to 175 K. A clear Bragg stop band in the laser emission spectrum indicates a dominant index coupling with the first-order grating. Detailed characteristics of these lasers are discussed. © 2004 American Institute of Physics.
ACCESSION #
12929987

 

Related Articles

  • Double-band generation in quantum-well semiconductor laser at high injection levels. Vinokurov, D. A.; Zorina, S. A.; Kapitonov, V. A.; Leshko, A. Yu.; Lyutetskiǐ;, A. V.; Nalet, T. A.; Nikolaev, D. N.; Pikhtin, N. A.; Rudova, N. A.; Slipchenko, S. O.; Sokolova, Z. N.; Stankevich, A. L.; Fetisova, N. V.; Khomylev, M. A.; Shamakhov, V. V.; Borshchev, K. S.; Arsent'ev, I. N.; Bondarev, A. D.; Trukan, M. K.; Tarasov, I. S. // Semiconductors;Oct2007, Vol. 41 Issue 10, p1230 

    Spectral and emission-power characteristics of semiconductor lasers based on quantum-dimensional asymmetric heterostructures with separate confinement in a system of InGaAs/GaAs/AlGaAs alloys are studied in the case of high pump levels in the pulsed mode of lasing (200 A, 100 ns, and 10 kHz). It...

  • Temperature dependence of interband transition energy in InGaAsN strain-compensated quantum-well and ridge-waveguide lasers fabricated with pulsed anodic oxidation. Qu, Y.; Zhang, J. X.; Uddin, A.; Liu, C. Y.; Yuan, S.; Chan, M. C. Y.; Bo, B.; Liu, G.; Jiang, H. // Applied Physics A: Materials Science & Processing;Feb2006, Vol. 82 Issue 2, p305 

    Ridge-waveguide InGaAsN triple-quantum-well strain-compensated lasers grown by metal organic chemical vapor deposition were fabricated with pulsed anodic oxidation. The laser’s output power reached 145 mW in continuous-wave mode at room temperature for a 4-μm -stripe-width laser....

  • Structural dependence of carrier capture time in semiconductor quantum-well lasers. Hader, J.; Moloney, J.V.; Koch, S.W. // Applied Physics Letters;7/19/2004, Vol. 85 Issue 3, p369 

    A fully microscopic model based on generalized quantum Bolzman equations for electron–electron and electron–phonon scattering is used to calculate the carrier capture dynamics in quantum-well lasers. The capture time and dynamics are governed by transitions between quantum states...

  • A numerical study of characteristic temperature of short-cavity 1.3-μm AlGaInAs/InP MQW lasers. Hsieh, S.-W.; Kuo, Y.-K. // Applied Physics A: Materials Science & Processing;Feb2006, Vol. 82 Issue 2, p287 

    Optical properties of a 1.3-μm AlGaInAs/InP strained multiple quantum-well structure with an AlInAs electron stopper layer, which is located between the active region and the p-type graded-index separate confinement heterostructure layer, are studied numerically with a LASTIP simulation...

  • High performance optically pumped antimonide lasers operating in the 2.4–9.3 μm wavelength range. Kaspi, R.; Ongstad, A. P.; Dente, G. C.; Chavez, J. R.; Tilton, M. L.; Gianardi, D. M. // Applied Physics Letters;1/23/2006, Vol. 88 Issue 4, p041122 

    We provide an update on the further development of optically pumped semiconductor lasers based on the InAs/InGaSb/InAs type-II quantum wells. We show increased power generation, as well as the inherent flexibility to produce devices that can emit at any wavelength in the ∼2.4 μm to...

  • Wafer-Fused Optically Pumped VECSELs Emitting in the 1310-nm and 1550-nm Wavebands. Sirbu, A.; Volet, N.; Mereuta, A.; Lyytik� inen, J.; Rautiainen, J.; Okhotnikov, O.; Walczak, J.; Wasiak, M.; Czyszanowski, T.; Caliman, A.; Zhu, Q.; Iakovlev, V.; Kapon, E. // Advances in Optical Technologies;2011, p1 

    1300-nm, 1550-nm, and 1480-nm wavelength, optically pumped VECSELs based on wafer-fused InAlGaAs/InP-AlGaAs/GaAs gain mirrors with intracavity diamond heat spreaders are described. These devices demonstrate very low thermal impedance of 4 K/W. MaximumCWoutput of devices with 5 groups of quantum...

  • Modeling of intersubband transitions in quantum well infrared photodetectors with complex potential profiles. Liu, W.; Zhang, D. H.; Fan, W. J. // Optical & Quantum Electronics;Oct2006, Vol. 38 Issue 12-14, p1101 

    The subband energy dispersions and optical intersubband transitions in n-type InGaAs/Al x Ga1- x As quantum well infrared photodetector (QWIP) with linear-graded barriers are calculated using an 8-band k·p model combined with the envelope-function Fourier expansion. The relaxation of quantum...

  • Ring cavity induced threshold reduction in single-mode surface emitting quantum cascade lasers. Mujagić, Elvis; Nobile, Michele; Detz, Hermann; Schrenk, Werner; Jianxin Chen; Gmachl, Claire; Strasser, Gottfried // Applied Physics Letters;1/18/2010, Vol. 96 Issue 3, p031111 

    We present ring cavity surface emitting (RCSE) quantum cascade lasers operating at temperatures as high as 380 K and above. A reduction in threshold current density and enhanced radiation efficiency are observed as compared to Fabry–Pérot (FP) lasers. In continuous wave, the maximum...

  • Microscopic simulation of nonequilibrium features in quantum-well pumped semiconductor disk lasers. Kühn, Eckhard; Koch, Stephan W.; Thränhardt, Angela; Hader, Jörg; Moloney, Jerome V. // Applied Physics Letters;2/1/2010, Vol. 96 Issue 5, p051116 

    A microscopically motivated nonequilibrium theory is applied to study the power characteristics of an in-well pumped vertical external cavity surface emitting Laser for varying pump energies. Dynamic simulations yield steady state nonequilibrium carrier distributions resulting in gain reduction...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics