Delta doping superlattice structures for amplitude modulators: Observation of the Stark effect and improvement of the chirp

Tribuzy, C.V.-B.; Pires, M.P.; Landi, S.M.; Borgström, M.; Souza, P.L.
April 2004
Applied Physics Letters;4/26/2004, Vol. 84 Issue 17, p3256
Academic Journal
A Stark shift for a GaAs/AlGaAs multiple quantum well structure containing a nipi delta-doping superlattice is observed. Photocurrent measurements revealed a Stark shift that varied with increasing applied electric field, from being equivalent to that of an undoped structure to 30% below. Even though these values are still below those predicted theoretically, they demonstrate the possibility of fabricating amplitude modulators using these novel structures. Furthermore, the obtained chirp parameter is within the desired [-1,0] range for long-distance optical communication, contrary to the high positive values for the undoped structure, showing that such device may have a better overall performance. © 2004 American Institute of Physics.


Related Articles

  • Electroabsorption modulator based on Wannier-Stark localization with 20 GHz/V efficiency. Devaux, Fabrice; Bigan, Erwan // Applied Physics Letters;12/7/1992, Vol. 61 Issue 23, p2773 

    Examines the modulator electroabsorption based on the Wannier-Stark localization in an indium gallium arsenide/indium aluminum arsenide superlattice. Measurement of anisotropic absorption; Acquisition of modulator efficiency; Comparison between the Wannier-Stark localization and quantum stark...

  • Quantum well waveguide intensity modulator at visible wavelengths using CdZnTe/ZnTe quantum wells. Lee, D.; Zucker, J.E.; Divino, M.D.; Austin, R.F.; Feldman, R.D.; Jones, K.L.; Johnson, A.M. // Applied Physics Letters;10/7/1991, Vol. 59 Issue 15, p1867 

    Demonstrates a waveguide intensity modulator for visible wavelengths based on the quantum-confined Stark effect. Composition of active waveguide; Estimation of voltages corresponding to electric fields in quantum well regions; Determination of modulation depth.

  • Quantum well saturable absorber mirror with electrical control of modulation depth. Xiaomin Liu; Rafailov, Edik U.; Livshits, Daniil; Turchinovich, Dmitry // Applied Physics Letters;8/2/2010, Vol. 97 Issue 5, p051103 

    We demonstrate a quantum well (QW) semiconductor saturable absorber mirror (SESAM) comprising low-temperature grown InGaAs/GaAs QWs incorporated into a p-i-n structure. By applying the reverse bias voltage in the range 0–2 V to the p-i-n structure, we were able to change the SESAM...

  • GaAs traveling-wave polarization electro-optic waveguide modulator with bandwidth in excess of 20 GHz at 1.3 μm. Wang, S. Y.; Lin, S. H.; Houng, Y. M. // Applied Physics Letters;7/13/1987, Vol. 51 Issue 2, p83 

    We report a 1.3-μm GaAs traveling-wave electro-optic waveguide modulator with a 3-dB optical bandwidth in excess of 20 GHz. The bandwidth was determined by directly detecting the modulated optical signal with a high-speed InP/GaInAs photodiode. The modulator has a coplanar strip electrode...

  • Analog Performance of Multiple-quantum-well Electroabsorption Modulator. Yun, Y.; Choi, Y.; Chung, J.; Kim, J. // Optical & Quantum Electronics;Sep2005, Vol. 37 Issue 11, p1025 

    Linearity is an important property of optical devices in analog communication systems. In this paper, we study the 3rd-order intermodulation distortion (IMD3) of an InP/InGaAsP multiple-quantum-well (MQW) traveling-wave type electroabsorption modulator (TW-EAM). We observe that dips in the...

  • Improvements in strain-balanced InGaAs/GaAs optical modulators for 1047-nm operation. Goodwill, D.J.; Walker, A.C.; Stanley, C.R.; Holland, M.C.; McElhinney, M. // Applied Physics Letters;3/7/1994, Vol. 64 Issue 10, p1192 

    Presents improvements in strain-balanced indium gallium arsenide/gallium arsenide electro-optic effect device modulators. Absorption peak of the device; Use of the indium gallium arsenide/gallium arsenide multiple quantum well; Application of a 13-V reverse bias to obtain a single pass...

  • Push-pull electro-optic polymer modulators with low half-wave voltage and low loss at both 1310 and 1550 nm. Zhang, Hua; Oh, Min-Cheol; Szep, Attila; Steier, William H.; Zhang, Cheng; Dalton, Larry R.; Erlig, Hernan; Chang, Yian; Chang, Daniel H.; Fetterman, Harold R. // Applied Physics Letters;5/14/2001, Vol. 78 Issue 20, p3136 

    Push-pull polymeric electro-optic Mach-Zehnder (MZ) modulators with V[sub π] of 1.2 and 1.8 V at 1310 and 1550 nm, respectively, with an interaction length of 2 cm are demonstrated. These devices were made from second-order nonlinear optic guest-host polymers that consisted of a...

  • Demonstration of 110 GHz electro-optic polymer modulators. Datong Chen; Fetterman, Harold R. // Applied Physics Letters;6/23/1997, Vol. 70 Issue 25, p3335 

    Demonstrates the electro-optic modulation up to 113 gigahertz by traveling wave polymer modulators. Detection of the signal at 1.3 micrometer using laser heterodyne system with external-cavity tunable semiconductor laser; Optical response variation of the device; Fabrication and testing of high...

  • 20 GHz electro-optic polymer Mach-Zehnder modulator. Girton, D.G.; Kwiatkowski, S.L. // Applied Physics Letters;4/22/1991, Vol. 58 Issue 16, p1730 

    Studies a electro-optic polymer-based integrated optic Mach-Zehnder modulator. Maximum measured frequency response; Half-wave voltage; Modulation depth; Observation of modulation using direct detection.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics