High detectivity InAs quantum dot infrared photodetectors

Eui-Tae Kim; Madhukar, Anupam; Zhengmao Ye; Campbell, Joe C.
April 2004
Applied Physics Letters;4/26/2004, Vol. 84 Issue 17, p3277
Academic Journal
We report a high detectivity of 3×1011 cm Hz1/2/W at 78 K for normal-incidence quantum dot infrared photodetectors with ten layers of undoped InAs/InGaAs/GaAs quantum dot active regions. The high detectivity seen at 1.4 V corresponds to photoresponse peaks at 9.3 and 8.7 μm for positive and negative bias, respectively. © 2004 American Institute of Physics.


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