Correlated structural and optical characterization of ammonothermally grown bulk GaN

Bai, J.; Dudley, M.; Raghothamachar, B.; Gouma, P.; Skromme, B.J.; Chen, L.; Hartlieb, P.J.; Michaels, E.; Kolis, J.W.
April 2004
Applied Physics Letters;4/26/2004, Vol. 84 Issue 17, p3289
Academic Journal
A series of ammonothermally grown bulk GaN crystals containing stacking faults has been characterized using structural [transmission electron microscopy (TEM) and synchrotron white-beam x-ray topography (SWBXT)] and optical [low-temperature photoluminescence (PL)] methods. Strong correlations are found between structural and optical properties. In particular, the occurrence of low-temperature PL peaks observed in the 3.30–3.45 eV range correlates with the observation of basal plane stacking faults by TEM (all of which were bounded by Shockley partial dislocations). In addition, the full width at half-maximum of the neutral donor-bound exciton PL peak correlates with the extent of mosaicity revealed on SWBXT Laue patterns recorded from the same crystals. © 2004 American Institute of Physics.


Related Articles

  • GaN blue photonic crystal membrane nanocavities. Choi, Y.-S.; Hennessy, K.; Sharma, R.; Haberer, E.; Gao, Y.; DenBaars, S. P.; Nakamura, S.; Hu, E. L.; Meier, C. // Applied Physics Letters;12/12/2005, Vol. 87 Issue 24, p243101 

    GaN-based photonic-crystal membrane nanocavities with Q factors up to 800 have been realized at the wavelength of ∼480 nm. The tuning behavior agrees well with numerical calculations using the finite-difference time-domain method. Theoretically, the lowest energy mode of a cavity that...

  • Annealing effect on the buffer layer of high-quality crystalline GaN. Tzong-Bin Wang; Wei-Chou Hsu; Rong-Tay Hsu; Yu-Huei Wu; Yu-Shyan Lin // AIP Conference Proceedings;2007, Vol. 893 Issue 1, p23 

    High-quality GaN films are prepared by low-pressure metal-organic chemical vapor deposition (LP-MOCVD). In situ optical reflectance traces reveal that the ramping time from low temperature to high temperature in the growth of the nucleation layer significantly affects the surface roughness....

  • Spatial distribution of defects and the kinetics of nonequilibrium charge carriers in GaN wurtzite crystals doped with Sm, Eu, Er, Tm, and supplementary Zn impurities. Mezdrogina, M.; Krivolapchuk, V.; Kozhanova, Yu. // Semiconductors;Feb2008, Vol. 42 Issue 2, p159 

    By analyzing time-resolved and steady-state photoluminescence spectra, it is established that the spatial distribution of rare-earth ion dopants in wurtzite GaN crystals doped with Sm, Eu, Er, or Tm is governed by the type and concentration of defects in the initial semiconductor matrix as well...

  • Growth stresses and cracking in GaN films on (111) Si grown by metal-organic chemical-vapor deposition. I. AlN buffer layers. Raghavan, Srinivasan; Redwing, Joan M. // Journal of Applied Physics;7/15/2005, Vol. 98 Issue 2, p023514 

    Intrinsic stress evolution during the growth of GaN by metal-organic chemical-vapor deposition on (111) Si, using an AlN buffer layer, was monitored in situ with a multiple-beam optical stress sensor. Data show that stress evolution takes place in two stages: an initial compressive regime up to...

  • Growth stresses and cracking in GaN films on (111) Si grown by metalorganic chemical vapor deposition. II. Graded AlGaN buffer layers. Raghavan, Srinivasan; Redwing, Joan // Journal of Applied Physics;7/15/2005, Vol. 98 Issue 2, p023515 

    Growth stress and critical thickness for cracking on cooling in GaN films deposited by metalorganic chemical vapor deposition on (111) Si using graded AlGaN (from AlN to GaN) buffer layers, 0.1–2 μm thick, were examined. During the growth of the graded buffer layers, the incremental...

  • Phase-field simulations of GaN growth by selective area epitaxy from complex mask geometries. Aagesen, Larry K.; Coltrin, Michael E.; Jung Han; Thornton, Katsuyo // Journal of Applied Physics;2015, Vol. 117 Issue 19, p1 

    Three-dimensional phase-field simulations of GaN growth by selective area epitaxy were performed. The model includes a crystallographic-orientation-dependent deposition rate and arbitrarily complex mask geometries. The orientation-dependent deposition rate can be determined from experimental...

  • Effects of growth rate of a GaN buffer layer on the properties of GaN on a sapphire substrate. Kim, Ki Soo; Oh, Chang Seok // Journal of Applied Physics;6/15/1999, Vol. 85 Issue 12, p8441 

    Presents information on a study of the effects of the growth rate of gallium nitride (GaN) buffer layer grown on a GaN epilayer. Background information on the study; Experimental details; Results and discussion.

  • Dislocation- and crystallographic-dependent photoelectrochemical wet etching of gallium nitride. Gao, Y.; Craven, M.D.; Speck, J.S.; DenBaars, S.P.; Hu, E.L. // Applied Physics Letters;4/26/2004, Vol. 84 Issue 17, p3322 

    Polarity and dislocation dependence study of photoelectrochemical wet etching on GaN was carried out on lateral epitaxial overgrown nonpolar (1120)a-GaN/(1102)r-plane sapphire substrate. This LEO nonpolar GaN sample has low dislocation density Ga- and N-faces exposed horizontally in opposite...

  • Control of crystallographic tilt in GaN grown on Si (111) by cantilever epitaxy. Katona, T. M.; Speck, J. S.; DenBaars, S. P. // Applied Physics Letters;11/4/2002, Vol. 81 Issue 19, p3558 

    We have eliminated the crystallographic tilt associated with lateral growth during cantilever epitaxy by adjusting the lateral to vertical growth rate during the initial stages of growth. Cantilever epitaxy is a single growth run technique utilizing periodic, parallel mesas formed by etching the...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics