TITLE

High-mobility field-effect transistors based on transition metal dichalcogenides

AUTHOR(S)
Podzorov, V.; Gershenson, M.E.; Kloc, Ch.; Zeis, R.; Bucher, E.
PUB. DATE
April 2004
SOURCE
Applied Physics Letters;4/26/2004, Vol. 84 Issue 17, p3301
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report on fabrication of field-effect transistors (FETs) based on transition metal dichalcogenides. The unique structure of single crystals of these layered inorganic semiconductors enables fabrication of FETs with intrinsically low field-effect threshold and high charge carrier mobility, comparable to that in the best single-crystal Si FETs (up to 500 cm2/V s for the p-type conductivity in the WSe2-based FETs at room temperature). These FETs demonstrate ambipolar operation. Owing to mechanical flexibility, they hold potential for applications in “flexible” electronics. © 2004 American Institute of Physics.
ACCESSION #
12879372

 

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