P-type conductivity in bulk AlxGa1-xN and AlxGa1-xN/AlyGa1-yN superlattices with average Al mole fraction >20%

Kim, J.K.; Waldron, E.L.; Li, Y.-L.; Gessmann, Th.; Schubert, E.F.; Jang, H.W.; Lee, J.-L.
April 2004
Applied Physics Letters;4/26/2004, Vol. 84 Issue 17, p3310
Academic Journal
Synchrotron radiation photoemission spectroscopy reveals enhanced oxygen incorporation in AlxGa1-xN as the Al mole fraction increases. It is shown that the increased oxygen donor incorporation can result in a conductivity-type change from p-type to n-type in Mg-doped AlxGa1-xN. Consistent with the conductivity-type change, epitaxial Al0.20Ga0.80N films exhibit n-type conductivity despite heavy Mg doping. The p-type conductivity of bulk AlxGa1-xN with a high Al mole fraction can be improved by employing AlxGa1-xN/AlyGa1-yN superlattices (SLs). At 300 K, Mg-doped Al0.17Ga0.83N/Al0.36Ga0.64N SLs (average Al mole fraction of 23%) exhibit strong p-type conductivity with a specific resistance of 4.6 Ω cm, a hole mobility of 18.8 cm2/Vs, and an acceptor activation energy of 195 meV. © 2004 American Institute of Physics.


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