TITLE

Enhancement of boron solid solubility in Si by point-defect engineering

AUTHOR(S)
Lin Shao; Jianming Zhang; Chen, John; Tang, D.; Thompson, Phillip E.; Patel, Sanjay; Xuemei Wang; Hui Chen; Jiarui Liu; Wei-Kan Chu
PUB. DATE
April 2004
SOURCE
Applied Physics Letters;4/26/2004, Vol. 84 Issue 17, p3325
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The technique of point-defect engineering (PDE), with excess vacancies produced near the surface region by MeV Si ion implantation, has been applied to form ultrashallow junctions with sub-keV B implants. PDE can reduce boride-enhanced diffusion that dominates the enhanced diffusion of ultralow energy B implants. PDE can further sharpen the dopant profile and enhance boron activation. For 1×1015/cm2, 0.5 keV B implant, B solid solubility has been enhanced over a wide temperature range of 750–1000 °C, with an enhancement factor of 2.5 at 900 °C. These features have enabled a shallower and sharper box-like boron junction achievable by PDE in combination with ultralow energy 0.5 keV B implantation. © 2004 American Institute of Physics.
ACCESSION #
12879364

 

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