Enhancement of boron solid solubility in Si by point-defect engineering

Lin Shao; Jianming Zhang; Chen, John; Tang, D.; Thompson, Phillip E.; Patel, Sanjay; Xuemei Wang; Hui Chen; Jiarui Liu; Wei-Kan Chu
April 2004
Applied Physics Letters;4/26/2004, Vol. 84 Issue 17, p3325
Academic Journal
The technique of point-defect engineering (PDE), with excess vacancies produced near the surface region by MeV Si ion implantation, has been applied to form ultrashallow junctions with sub-keV B implants. PDE can reduce boride-enhanced diffusion that dominates the enhanced diffusion of ultralow energy B implants. PDE can further sharpen the dopant profile and enhance boron activation. For 1×1015/cm2, 0.5 keV B implant, B solid solubility has been enhanced over a wide temperature range of 750–1000 °C, with an enhancement factor of 2.5 at 900 °C. These features have enabled a shallower and sharper box-like boron junction achievable by PDE in combination with ultralow energy 0.5 keV B implantation. © 2004 American Institute of Physics.


Related Articles

  • Origin of Efficient Light Emission from Si pn Diodes Prepared by Ion Implantation. Dekorsy, T.; Sun, J. M.; Skorupa, W.; Mücklich, A.; Schmidt, B.; Helm, M. // AIP Conference Proceedings;2005, Vol. 772 Issue 1, p1539 

    Electroluminescence with power efficiencies larger than 0.1 % is observed from silicon pn diodes prepared by boron implantation. The implanted boron concentration is above the solubility limit for the post-implantation annealing temperature leading to the formation of boron clusters during...

  • Diffusion of boron in 6H and 4H SiC coimplanted with boron and nitrogen ions. Usov, I. O.; Suvorova, A. A.; Kudriavtsev, Y. A.; Suvorov, A. V. // Journal of Applied Physics;11/1/2004, Vol. 96 Issue 9, p4960 

    The diffusion behavior of boron (B) and nitrogen (N) implanted in 6H and 4H silicon carbide (SiC) samples was investigated using secondary ion mass spectroscopy. The samples were either coimplanted with B and N ions or implanted with each element alone. The annealing was performed at 1700 °C...

  • Anomalous Solubility of Implanted Nitrogen in Heavily Boron-Doped Silicon. Tetelbaum, D.I.; Zorin, E.I.; Lisenkova, N.V. // Semiconductors;Jul2004, Vol. 38 Issue 7, p775 

    It is established that an anomalously high electron concentration can be attained in heavily boron-doped silicon using ion implantation followed by implantation with nitrogen at an elevated temperature; the concentration of electrons can exceed that of boron. A model of this phenomenon is...

  • The Formation of Ultra-Shallow Phosphorous Doped Layers Using Vacancy Engineering. Smith, A. J.; Yeong, S. H.; Colombeau, B.; Sealy, B. J.; Gwilliam, R. M. // AIP Conference Proceedings;11/3/2008, Vol. 1066 Issue 1, p38 

    Vacancy Engineering has previously been shown to be highly efficient in improving the junction properties of a p-type boron implant. This study examines the effect of a Vacancy Engineering Implant (VEI) prior to a low-energy n-type phosphorous implant. These initial results indicate that an...

  • Formation of ultrashallow p+-n junctions by low-energy boron implantation using a modified ion implanter. Hong, S. N.; Ruggles, G. A.; Paulos, J. J.; Wortman, J. J.; Ozturk, M. C. // Applied Physics Letters;10/31/1988, Vol. 53 Issue 18, p1741 

    A conventional ion implanter (Varian Extrion Series 400 implanter) has been modified for the purpose of implanting at ultralow energies (0.5–5 keV). A 35 keV ion beam is decelerated to the desired energy just prior to impacting the substrate, thereby minimizing beam expansion and beam...

  • Controlled shallow single-ion implantation in silicon using an active substrate for sub-20-keV ions. Jamieson, D. N.; Yang, C.; Hopf, T.; Hearne, S. M.; Pakes, C. I.; Prawer, S.; Mitic, M.; Gauja, E.; Andresen, S. E.; Hudson, F. E.; Dzurak, A. S.; Clark, R. G. // Applied Physics Letters;5/16/2005, Vol. 86 Issue 20, p202101 

    We demonstrate a method for the controlled implantation of single ions into a silicon substrate with energy of sub-20-keV. The method is based on the collection of electron-hole pairs generated in the substrate by the impact of a single ion. We have used the method to implant single 14-keV 31P...

  • Solid state quantum computer development in silicon with single ion implantation. Schenkel, T.; Persaud, A.; Park, S. J.; Nilsson, J.; Bokor, J.; Liddle, J. A.; Keller, R.; Schneider, D. H.; Cheng, D. W.; Humphries, D. E. // Journal of Applied Physics;12/1/2003, Vol. 94 Issue 11, p7017 

    Spawned by the finding of efficient quantum algorithms, the development of a scalable quantum computer has emerged as a premiere challenge for nanoscience and nanotechnology in the last years. Spins of electrons and nuclei in [sup 31]P atoms embedded in silicon are promising quantum bit (qubit)...

  • The effect of high iron-ion implantation doses on the X-ray emission spectra of silicon. Zatsepin, D. A.; Yanenkova, E. S.; Kurmaev, É Z..; Cherkashenko, V. M.; Shamin, S. N.; Cholakh, S. O. // Physics of the Solid State;Feb2006, Vol. 48 Issue 2, p218 

    X-ray emission spectroscopy (Si L 2, 3 spectra, 3 d3 s → 2 p electronic transition) was employed to study p-and n-type silicon samples implanted with Fe+ ions in a pulse mode (the implantation energy was 30 keV, the pulse current was varied up to 0.5 A, the pulse duration was 400 µs,...

  • Comprehensive model of damage accumulation in silicon. Mok, K. R. C.; Benistant, F.; Jaraiz, M.; Rubio, J. E.; Castrillo, P.; Pinacho, R.; Srinivasan, M. P. // Journal of Applied Physics;Jan2008, Vol. 103 Issue 1, p014911 

    Ion implantation induced damage accumulation is crucial to the simulation of silicon processing. We present a physically based damage accumulation model, implemented in a nonlattice atomistic kinetic Monte Carlo simulator, that can simulate a diverse range of interesting experimental...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics