TITLE

Measurement of Ga implantation profiles in the sidewall and bottom of focused-ion-beam-etched structures

AUTHOR(S)
Park, C.-M.; Bain, J.A.; Clinton, T.W.; van der Heijden, P.A.A.; Klemmer, T.J.
PUB. DATE
April 2004
SOURCE
Applied Physics Letters;4/26/2004, Vol. 84 Issue 17, p3331
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Ga implantation during focused-ion-beam (FIB) milling of metallic magnetic materials for magnetic recording heads was examined using Auger electron spectroscopy (AES). The Ga concentration profiles were characterized in two directions: in the depth direction (parallel to the incident beam) and in the lateral direction (perpendicular to the incident beam). The sample for AES analyses in the depth direction was prepared by FIB etching of a plated Ni78.5Fe21.5 film surface. The AES depth profile showed a maximum implanted Ga concentration of ∼20 at. % at a distance of ∼15 nm, and the tail of the implantation profile reached more than 100 nm. The sample for the lateral direction analyses was prepared by cutting a cross-sectional specimen out of the air-bearing surface of a working recording head. The lateral profile showed a maximum implanted Ga concentration of 47 at. % at the surface, with a lateral implantation depth of ∼10 nm. These results were compared with results predicted by a Monte Carlo implantation simulation package (TRIM). The simulated lateral profile was reasonably consistent with experimental observation, but the simulated depth profile agreed with experiment less well. Specifically, it did not predict the observed concentration levels observed as deep as 100 nm, which are believed to be due to dynamical sputtering effects. © 2004 American Institute of Physics.
ACCESSION #
12879362

 

Related Articles

  • Quenching of surface-exciton emission from ZnO nanocombs by plasma immersion ion implantation. Yang, Y.; Tay, B. K.; Sun, X. W.; Sze, J. Y.; Han, Z. J.; Wang, J. X.; Zhang, X. H.; Li, Y. B.; Zhang, S. // Applied Physics Letters;8/13/2007, Vol. 91 Issue 7, p071921 

    Surface modification of ZnO nanocombs was performed through a Ti plasma immersion ion implantation (PIII) with low bias voltages ranging from 0 to 5 kV to quench surface-originated exciton emission. The ion energy dependent surface modification on ZnO was investigated using transmission electron...

  • Summary of Industry-Academia Collaboration Projects on Cluster Ion Beam Process Technology. Yamada, Isao; Matsuo, Jiro; Toyoda, Noriaki // AIP Conference Proceedings;11/3/2008, Vol. 1066 Issue 1, p415 

    Processes employing clusters of ions comprised of a few hundred to many thousand atoms are now being developed into a new field of ion beam technology. Cluster-surface collisions produce important non-linear effects which are being applied to shallow junction formation, to etching and smoothing...

  • Maskless implants of 20 keV Ga+ in thin crystalline silicon on insulator. Mio, A. M.; D'Arrigo, G.; Milazzo, R. G.; Rimini, E.; Spinella, C.; Peto, L.; Nadzeyka, A.; Bauerdick, S. // Journal of Applied Physics;Jan2013, Vol. 113 Issue 4, p044315 

    A nano-sized ion beam apparatus has been used as maskless lithography to implant 20 keV Ga+ ions into a 26 nm thick silicon crystalline film on insulator. The ion beam, with about 5 nm standard deviation, delivered few hundred ions during a single shot. Circular areas with nominal diameter of 20...

  • Compositional and structural changes in LiNbO3 following deep He+ ion implantation for film exfoliation. Roth, Ryan M.; Djordje Djukic; Yoo Seung Lee; Osgood, Richard M.; Bakhru, Sasha; Laulicht, Bryan; Dunn, Kathleen; Bakhru, Hassaram; Liqi Wu; Mengbing Huang // Applied Physics Letters;9/11/2006, Vol. 89 Issue 11, p112906 

    The physical mechanism of He-ion-based exfoliation in Z-cut LiNbO3 is investigated. Rutherford backscattering/channeling, nuclear-reaction analysis, and transmission electron microscopy are used to examine the compositional and structural changes caused by deep ion implantation followed by...

  • Inspection of pole tip diamondlike carbon wear due to heater-induced head-disc contact. Dion Song; Kvitek, Richard; Schnur, Deborah // Journal of Applied Physics;4/15/2006, Vol. 99 Issue 8, p08N107 

    Heater-induced head-disc contacts can cause highly localized wear of the pole tip. We found that scanning electron microscopy and low beam-current focused ion beam imaging are suited at providing a map of the entire pole tip surface and quickly identify the location and shape of heater-induced...

  • Ion-beam annealing of electron traps in n-type Si by post-H+ implantation. Ito, A.; Tokuda, Y. // Journal of Applied Physics;8/1/1997, Vol. 82 Issue 3, p1053 

    Studies the effects of post-hydrogen ion implantation on electron traps that are induced by potassium ion implantation using deep-level transient spectroscopy. Change of electron traps; Depth profiles of trap concentrations; Ion-beam-annealing efficiency profiles.

  • A very large Paul trap ion gun for delivering bunched low energy ion beams. Ghalambor-Dezfuli, A. M.; Moore, R. B.; Schwartz, Stefan // Review of Scientific Instruments;Feb2002, Vol. 73 Issue 2, p685 

    Ions extracted from mass separators normally have energies in the range of tens of kilovolts and poor emittances, and are thereby not suited for soft landing, especially in ion deposition applications. In this article a system is described that has been developed for in-flight capture of...

  • Reduction of secondary defects in MeV ion-implanted silicon by means of ion beam defect engineering. Wang, Zhong-lie; Zhang, Bo-xu; Zhao, Qing-tai; Li, Qi; Liefting, J. R.; Schreutelkamp, R. J.; Saris, F. W. // Journal of Applied Physics;4/15/1992, Vol. 71 Issue 8, p3780 

    Proposes a concept called ion beam defect engineering. Background to the study; Experimental procedures; Experimental results.

  • Diagnostics of high-power ion beam interaction with composite targets. Utkin, A. V.; Kanel, G. I.; Razorenov, S. V.; Baumung, K.; Rusch, D. // Journal of Applied Physics;3/1/1996, Vol. 79 Issue 5, p2180 

    Presents information on a study that investigated the interaction of a high-power proton beam. Experimental technique; Experimental results; Conclusion.

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics