Measurement of Ga implantation profiles in the sidewall and bottom of focused-ion-beam-etched structures

Park, C.-M.; Bain, J.A.; Clinton, T.W.; van der Heijden, P.A.A.; Klemmer, T.J.
April 2004
Applied Physics Letters;4/26/2004, Vol. 84 Issue 17, p3331
Academic Journal
Ga implantation during focused-ion-beam (FIB) milling of metallic magnetic materials for magnetic recording heads was examined using Auger electron spectroscopy (AES). The Ga concentration profiles were characterized in two directions: in the depth direction (parallel to the incident beam) and in the lateral direction (perpendicular to the incident beam). The sample for AES analyses in the depth direction was prepared by FIB etching of a plated Ni78.5Fe21.5 film surface. The AES depth profile showed a maximum implanted Ga concentration of ∼20 at. % at a distance of ∼15 nm, and the tail of the implantation profile reached more than 100 nm. The sample for the lateral direction analyses was prepared by cutting a cross-sectional specimen out of the air-bearing surface of a working recording head. The lateral profile showed a maximum implanted Ga concentration of 47 at. % at the surface, with a lateral implantation depth of ∼10 nm. These results were compared with results predicted by a Monte Carlo implantation simulation package (TRIM). The simulated lateral profile was reasonably consistent with experimental observation, but the simulated depth profile agreed with experiment less well. Specifically, it did not predict the observed concentration levels observed as deep as 100 nm, which are believed to be due to dynamical sputtering effects. © 2004 American Institute of Physics.


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