High electrostriction and relaxor ferroelectric behavior in proton-irradiated poly(vinylidene fluoride-trifluoroethylene) copolymer

Shishang Guo; Xing-Zhong Zhao; Qifa Zhou; Chan, Helen L.W.; Choy, C.L.
April 2004
Applied Physics Letters;4/26/2004, Vol. 84 Issue 17, p3349
Academic Journal
Effect of proton irradiation on poly(vinylidene fluoride-trifluoroethylene) 56/44 mol % copolymer has been studied using a Mach–Zehnder heterodyne interferometer, polarization hysteresis loop and dielectric constant measurements. The electrical-field-induced strain response of the copolymer after proton bombardment follows a quadratic electrostriction relationship. The electrostrictive coefficient at 5 kHz is similar to that obtained with a bimorph-based strain sensor, but at a much lower electric field. The polarization hysteresis after proton irradiation is reduced considerably and the dielectric constant exhibits typical relaxor behavior, which is suggested as the cause of the observed results. © 2004 American Institute of Physics.


Related Articles

  • RADIATION DAMAGE TO BSCCO-2223 FROM 50 MEV PROTONS. Zeller, A. F.; Ronningen, R. M.; Godeke, A.; Heilbronn, L. H.; McMahan-Norris, P.; Gupta, R. // AIP Conference Proceedings;3/3/2008, Vol. 986 Issue 1, p416 

    The use of HTS materials in high radiation environments requires that the superconducting properties remain constant up to a radiation high dose. BSCCO-2223 samples from two manufacturers were irradiated with 50 MeV protons at fluences of up to 5×1017 protons/cm2. The samples lost...

  • Exchange biasing and electric polarization with YMnO3. Martí, X.; Sánchez, F.; Hrabovsky, D.; Fàbrega, L.; Ruyter, A.; Fontcuberta, J.; Laukhin, V.; Skumryev, V.; García-Cuenca, M. V.; Ferrater, C.; Varela, M.; Vilà, A.; Lüders, U.; Bobo, J. F. // Applied Physics Letters;7/17/2006, Vol. 89 Issue 3, p032510 

    We report on the growth and functional characterizations of epitaxial thin films of the multiferroic YMnO3. We show that using Pt as a seed layer on SrTiO3(111) substrates, epitaxial YMnO3 films (0001) textured are obtained. An atomic force microscope has been used to polarize electric domains...

  • Study of intermixing and Zr-silicide formation using swift heavy ion irradiation. Agarwal, Garima; Kulshrestha, Vaibhav; Dhunna, Renu; Kabiraj, D.; Verma, Shikha; Jain, I. P. // Applied Physics A: Materials Science & Processing;Jun2010, Vol. 99 Issue 4, p879 

    Swift heavy ion ( SHI) beam induced irradiation is an established technique for investigating structural modifications in thin films depending on the Se sensitivity of material. Intermixing due to 120 MeV Au ion irradiation at different fluences from 1012 to 1014 ions/cm2 has been reported as a...

  • Investigations on V-defects in quaternary AlInGaN epilayers. Liu, J. P.; Wang, Y. T.; Yang, H.; Jiang, D. S.; Jahn, U.; Ploog, K. H. // Applied Physics Letters;6/28/2004, Vol. 84 Issue 26, p5449 

    The characteristics of V-defects in quaternary AIInGaN epilayers and their correlation with fluctuations of the In distribution are investigated. The geometric size of the V-defects is found to depend on the In composition of the alloy. The V-defects are nucleated within the AlInGaN layer and...

  • Radiation tolerance of Si/Si0.6Ge0.4 resonant interband tunneling diodes. Weaver, B. D.; Thompson, P. E.; Jin, N.; Chung, S.-Y.; Rice, A. T.; Berger, P. R. // Journal of Applied Physics;6/1/2004, Vol. 95 Issue 11, p6406 

    The effect of 2 MeV proton irradiation on the current–voltage (IV) characteristics of Si/Si0.6Ge0.4 resonant interband tunneling diodes (RITDs) is reported. A fluence of 5×1014 H+/cm2 causes the peak current to increase by about 4% the valley current to nearly double and the...

  • Physics update. Schewe, Phillip F. // Physics Today;Jun97, Vol. 50 Issue 6, p9 

    Provides information on a proton transistor memory device. Role of hydrogen ions in the construction of the memory device; How the proton migrate between the interfaces with other silicon layers.

  • Electrical properties of Bi3.15Sm0.85Ti3O12 thin films on Si for a metal-ferroelectric-semiconductor-metal structure. Liu, W. L.; Xia, H. R.; Han, H.; Wang, X. Q. // Journal of Materials Science;Jun2004, Vol. 39 Issue 12, p4005 

    Examines the electrical properties of the ferroelectric material, bismuth titanate thin films on silicon for a metal-ferroelectric-semiconductor-metal structure. Industrial applications of bismuth titanate; Influence of impurity on the physical properties of the material; Bismuth ions' effects...

  • Integration of (PbZr0.52Ti0.48O3) on single crystal diamond as metal-ferroelectric-insulator-semiconductor capacitor. Meiyong Liao; Imura, Masataka; Xiaosheng Fang; Nakajima, Kiyomi; Guangchao Chen; Koide, Yasuo // Applied Physics Letters;6/15/2009, Vol. 94 Issue 24, p242901 

    The authors report the integration of ferroelectric Pb(Zr0.52,Ti0.48)O3 (PZT) thin film on single crystal diamond by using Al2O3 as a buffer layer and SrTiO3 as a seed layer. The PZT film exhibits a remanent in-plane polarization of 2Pr=31 μC/cm2 and a coercive field of 36 kV/cm. The...

  • Degenerate rhombohedral and orthorhombic states in Ca-substituted Na0.5Bi0.5TiO3. Ranjan, Rajeev; Kothai, V.; Garg, Rohini; Agrawal, Anupriya; Senyshyn, Anatoliy; Boysen, Hans // Applied Physics Letters;7/27/2009, Vol. 95 Issue 4, p042904 

    Neutron powder diffraction and temperature dependent dielectric studies were carried out on Ca-substituted Na0.5Bi0.5TiO3, i.e., (Na0.5Bi0.5)1-xCaxTiO3. Stabilization of an orthorhombic phase even at a low Ca concentration (0.05


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics