TITLE

Temperature-dependent fatigue behaviors of ferroelectric ABO3-type and layered perovskite oxide thin films

AUTHOR(S)
Yuan, G.L.; Liu, J.-M.; Wang, Y.P.; Wu, D.; Zhang, S.T.; Shao, Q.Y.; Liu, Z.G.
PUB. DATE
April 2004
SOURCE
Applied Physics Letters;4/26/2004, Vol. 84 Issue 17, p3352
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The temperature-dependent dielectric and ferroelectric fatigue behaviors of ABO3-type perovskite thin films Pb(Zr0.52Ti0.48)O3 (PZT) and Pb0.75La0.25TiO3 (PLT) and layered Aurivillius thin films SrBi2Ta2O9 (SBT) and Bi3.25La0.75Ti3O12 (BLT) with Pt electrodes are studied. The improved fatigue resistance of PZT and PLT at a low temperature can be explained by the defect-induced suppression of domain switch/nucleation near the film/electrode interface, which requires a long-range diffusion of defects and charges. It is argued that the fatigue effect of SBT and BLT is attributed to the competition between domain-wall pinning and depinning. The perovskitelike slabs and/or (Bi2O2)2+ layers act as barriers for long-range diffusion of defects and charges, resulting in localization of the defects and charges. Thus, the fatigued SBT and BLT can be easily rejuvenated by a high electric field over a wide temperature range. © 2004 American Institute of Physics.
ACCESSION #
12879355

 

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