Temperature-dependent fatigue behaviors of ferroelectric ABO3-type and layered perovskite oxide thin films

Yuan, G.L.; Liu, J.-M.; Wang, Y.P.; Wu, D.; Zhang, S.T.; Shao, Q.Y.; Liu, Z.G.
April 2004
Applied Physics Letters;4/26/2004, Vol. 84 Issue 17, p3352
Academic Journal
The temperature-dependent dielectric and ferroelectric fatigue behaviors of ABO3-type perovskite thin films Pb(Zr0.52Ti0.48)O3 (PZT) and Pb0.75La0.25TiO3 (PLT) and layered Aurivillius thin films SrBi2Ta2O9 (SBT) and Bi3.25La0.75Ti3O12 (BLT) with Pt electrodes are studied. The improved fatigue resistance of PZT and PLT at a low temperature can be explained by the defect-induced suppression of domain switch/nucleation near the film/electrode interface, which requires a long-range diffusion of defects and charges. It is argued that the fatigue effect of SBT and BLT is attributed to the competition between domain-wall pinning and depinning. The perovskitelike slabs and/or (Bi2O2)2+ layers act as barriers for long-range diffusion of defects and charges, resulting in localization of the defects and charges. Thus, the fatigued SBT and BLT can be easily rejuvenated by a high electric field over a wide temperature range. © 2004 American Institute of Physics.


Related Articles

  • Dielectric nonlinearity in relaxor and ferroelectric thin films of chemically ordered PbSc0.5Nb0.5O3. Tyunina, M.; Levoska, J. // Applied Physics Letters;11/15/2004, Vol. 85 Issue 20, p4720 

    Dynamic nonlinear dielectric response of pulsed laser deposited epitaxial thin films of chemically ordered perovskite PbSc0.5Nb0.5O3 was experimentally studied and analyzed. Films deposited at 925 K exhibited relaxor-like behavior indicated by frequency dispersion of temperature of dielectric...

  • Electric-pulse-induced reflectance change in the thin film of perovskite manganite. Aoyama, K.; Waku, K.; Asanuma, A.; Uesu, Y.; Katsufuji, T. // Applied Physics Letters;8/16/2004, Vol. 85 Issue 7, p1208 

    We demonstrate a nonvolatile, reversible change of infrared reflectance from the thin film of perovskite manganite (Pr1-xCaxMnO3) by applying electric pulse. The result provides a possibility to use the electric-pulse-induced phenomena of this compound in optical devices.

  • Piezoelectric K0.5Na0.5NbO3 thick films derived from polyvinylpyrrolidone-modified chemical solution deposition. Lingyan Wang; Kui Yao; Wei Ren // Applied Physics Letters;9/1/2008, Vol. 93 Issue 9, p092903 

    Lead-free K0.5Na0.5NbO3 (KNN) ferroelectric films with enhanced thickness of 3.5 μm were prepared by a polyvinylpyrrolidone-modified chemical solution deposition method. A single perovskite phase with a dense morphology and (100) orientation was obtained at relatively low annealing...

  • Simulation of oxygen vacancy induced phenomena in ferroelectric thin films. Li, Kwok Tung; Lo, Veng Cheong // Journal of Applied Physics;2/1/2005, Vol. 97 Issue 3, p034107 

    The role of oxygen vacancy in lead–titanate–zirconate ferroelectric thin film has been numerically simulated using the two-dimensional four-state Potts model. On one hand, the presence of an oxygen vacancy in a perovskite cell strongly influences the displacement of the Ti4+ ion....

  • Ferroelectric behaviors and charge carriers in Nd-doped Bi4Ti3O12 thin films. Gao, X. S.; Xue, J. M.; Wang, J. // Journal of Applied Physics;2/1/2005, Vol. 97 Issue 3, p034101 

    Nd-doped Bi4Ti3O12 thin films, (Bi3.25Nd0.85)4Ti3O12, of layered perovskite structure were synthesized by rf sputtering, followed by postannealing at 600–700 °C. They show enhanced ferroelectricity with rising postannealing temperature in the range of 650–750 °C. When...

  • Highly localized strain fields due to planar defects in epitaxial SrBi2Nb2O9 thin films. Boulle, A.; Guinebretière, R.; Dauger, A. // Journal of Applied Physics;4/1/2005, Vol. 97 Issue 7, p073503 

    Thin films of (00l) oriented SrBi2Nb2O9 epitaxially grown on SrTiO3 by sol-gel spin coating have been studied by means of high-resolution x-ray diffraction reciprocal space mapping. It is shown that these materials contain highly localized heterogeneous strain fields due to imperfect stacking...

  • Structural changes and ferroelectric properties of BiFeO3–PbTiO3 thin films grown via a chemical multilayer deposition method. Gupta, Shashaank; Garg, Ashish; Agrawal, Dinesh Chandra; Bhattacharjee, Shuvrajyoti; Pandey, Dhananjai // Journal of Applied Physics;Jan2009, Vol. 105 Issue 1, p014101 

    Thin films of (1-x)BiFeO3–xPbTiO3 (BF-xPT) with x≈0.60 were fabricated on Pt/Si substrates by chemical solution deposition of precursor BF and PT layers alternately in three different multilayer configurations. These multilayer deposited precursor films upon annealing at 700 °C...

  • Growth and characterization of CaCu2Mn5O12 thin films deposited on CaCu3Ti4O12-buffered LaAlO3 substrates. Autier-Laurent, S.; Mercey, B.; Simon, Ch. // Applied Physics Letters;12/12/2005, Vol. 87 Issue 24, p242502 

    Thin films of perovskitelike CaCu2Mn5O12 have been grown by pulsed laser deposition. These films are ferromagnetic with a Curie temperature (TC) of 292 K which is very close to that expected for the bulk material (TC=310 K). Increasing the oxygen pressure during cooling does not markedly affect...

  • (Bi,La)4Ti3O12 (BLT) thin films grown from nanocrystalline perovskite nuclei for ferroelectric memory devices. Kim, N.K.; Yeom, S.J.; Kweon, S.Y.; Choi, E.S.; Sun, H.J.; Roh, J.S.; Sohn, H.C.; Lee, D.W.; Kim, H.S.; Choi, B.H.; Kim, J.W.; Choi, K.J.; Seong, N.J.; Yoon, S.G. // Applied Physics Letters;11/1/2004, Vol. 85 Issue 18, p4118 

    Using nanocrystalline perovskite nuclei, (117) oriented-(Bi,La)4Ti3O12(BLT) thin films were grown using a noble bake process for nonvolatile ferroelectric memory devices. The c-axis oriented BLT thin films have a remanent polarization (2Pr) of 8.0 μC/cm2 at a 3 V driving voltage, and the...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics