Low-temperature orientation-selective growth and ultraviolet emission of single-crystal ZnO nanowires

Kim, Tae-Won; Kawazoe, Tadashi; Yamazaki, Shunsuke; Ohtsu, Motoichi; Sekiguchi, Takashi
April 2004
Applied Physics Letters;4/26/2004, Vol. 84 Issue 17, p3358
Academic Journal
We fabricated single-crystal ZnO nanowires at a low temperature of 500 °C without using any metal catalysts via the simple thermal oxidation of metallic Zn precursors. Scanning electron microscopy and high-resolution transmission electron microscopy (HRTEM) studies showed that the ZnO nanowires with orientation-selectivity grew laterally along the sides of the hexagonal-shaped ZnO matrix transformed from the metallic Zn precursors. It was found that the nanowires grew along the <1120> direction and were single crystals by HRTEM study. Typically, the lengths of the ZnO nanowires ranged from 0.5 to 3 μm and their mean diameter was 20±5 nm. Photoluminescence and cathodoluminescence measurements at room temperature showed a strong ultraviolet emission peak with negligibly weak green emissions, confirming that the individual ZnO nanowire was of excellent optical quality. Based on these results, we conclude that the simple thermal oxidation of metal Zn precursors is a useful, feasible approach for fabricating high-quality one-dimensional ZnO nanostructures for integration into nanophotonic integrated circuits. © 2004 American Institute of Physics.


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