Tuning of the electronic properties of self-assembled InAs/InP(001) quantum dots by rapid thermal annealing

Girard, J.F.; Dion, C.; Desjardins, P.; Allen, C. Nì; Poole, P.J.; Raymond, S.
April 2004
Applied Physics Letters;4/26/2004, Vol. 84 Issue 17, p3382
Academic Journal
We have investigated the effect of post-growth rapid thermal annealing on the low-temperature photoluminescence (PL) spectra of self-assembled InAs quantum dots (QDs) grown in InP(001) by chemical-beam epitaxy using both conventional and modified capping procedures. As-grown samples are characterized by a broad emission peak centered near 800–900 meV corresponding to distinct QD families of different sizes with no observable wetting-layer emission. Rapid thermal anneals were performed at 650 to 800 °C for 210 s, resulting in blueshifts of up to 120 meV due to intermixing. While the PL emission energies of the various QD families shift at similar rates upon annealing, the peak widths remain approximately constant. Finally, we show that the growth of a low-temperature InP cap layer containing a large number of point defects significantly enhances interdiffusion and results in PL blueshifts in excess of 300 meV. © 2004 American Institute of Physics.


Related Articles

  • Lasing Wavelength of Quantum Dot Heterostructures Controlled within the 1.3–0.85μm Range by Means of High-Temperature Annealing. Nikitina, E. V.; Zhukov, A. E.; Vasil'ev, A. P.; Semenova, E. S.; Gladyshev, A. G.; Kryzhanovskaya, N. V.; Maksimov, M. V.; Shernyakov, Yu. M.; Ustinov, V. M.; Ledentsov, N. N. // Technical Physics Letters;Aug2004, Vol. 30 Issue 8, p644 

    We have studied the effect of high-temperature annealing on the properties of a laser heterostructure with InAs quantum dots in AlAs/GaAs superlattice. By increasing the time of annealing at 700°C, it is possible to provide for a smooth variation of the lasing wavelength from 1290 to 916 nm...

  • Characteristics of InGaAs quantum dots grown on tensile-strained GaAs1-xPx. Kim, N. H.; Ramamurthy, P.; Mawst, L. J.; Kuech, T. F.; Modak, P.; Goodnough, T. J.; Forbes, D. V.; Kanskar, M. // Journal of Applied Physics;5/1/2005, Vol. 97 Issue 9, p093518 

    InGaAs quantum dots (QDs) embedded in tensile-strained GaAs1-xPx (x=0.0–0.45) barrier layers are grown using low-pressure metal-organic chemical-vapor deposition. Variable-temperature photoluminescence (PL) measurement demonstrates that the lowest-energy QD transition can be blueshifted...

  • Efficient room temperature carrier trapping in quantum dots by tailoring the wetting layer. Colombo, D.; Sanguinetti, S.; Grilli, E.; Guzzi, M.; Martinelli, Lucio; Gurioli, M.; Frigeri, P.; Trevisi, G.; Franchi, S. // Journal of Applied Physics;11/15/2003, Vol. 94 Issue 10, p6513 

    The temperature dependence of carrier confinement in states of self-assembled In[sub 0.5]Ga[sub 0.5]As quantum dots (QDs) embedded in Al[sub y]Ga[sub 1-y]As barriers has been investigated by means of photoluminescence (PL) measurements. We show that photoexcited carriers above the AlGaAs...

  • Double hydrogenic impurities in double quantum dots. Wang, Xue-Feng; Liu, Yong-Hui // Journal of Applied Physics;Sep2007, Vol. 102 Issue 6, p063708 

    The ground states and degree of entanglement of double hydrogenic impurities in a pair of vertically stacked InGaAs/GaAs quantum dots are studied with a proposed diagonalization technique. It is found that at short barrier widths, the entanglement is small due to the coupling between the intra-...

  • Single-photon interferography in InAs/InP quantum dots emitting at 1300 nm wavelength. Kuroda, T.; Sakuma, Y.; Sakoda, K.; Takemoto, K.; Usuki, T. // Applied Physics Letters;11/26/2007, Vol. 91 Issue 22, p223113 

    Photoluminescence from a single InAs/InP quantum dot emitting at a wavelength of 1300 nm is analyzed by the interferography technique. The first-order correlation function was measured for emission signals from an isolated quantum dot with continuous wave photoexcitation. The spectral shape was...

  • The study of lateral carrier transport in structures with InGaN quantum dots in the active region. Sizov, V. S.; Sizov, D. S.; Mikhailovskiĭ, G. A.; Zavarin, E. E.; Lundin, V. V.; Tsatsul'nikov, A. F.; Ledentsov, N. N. // Semiconductors;May2006, Vol. 40 Issue 5, p574 

    GaN-based structures with InGaN quantum dots in the active region, which emit in the blue and green spectral ranges, are studied. The structures grown by both the conventional method and with the use of special procedures of the growth of the active region were compared. The use of these special...

  • Optical and Structural Properties of InAs Quantum Dot Arrays Grown in an InxGa1 — xAs Matrix on a GaAs Substrate. Kryzhanovskaya, N.V.; Gladyschev, A.G.; Blokhin, S.A.; Musikhin, Yu G.; Zhukov, A.E.; Maksimov, M.V.; Zakharov, N.D.; Tatsul'nikov, A.F.; Ledentsov, N.N.; Werner, P.; Guffart, F.; Bimberg, D. // Semiconductors;Jul2004, Vol. 38 Issue 7, p833 

    Structural and optical properties of InAs quantum dots (QDs) deposited on the surface of a thick InGaAs metamorphic layer grown on a GaAs substrate have been studied. The density and lateral size of QDs are shown to increase in comparison with the case of QDs grown directly on a GaAs substrate....

  • NIST RESEARCHERS MEASURE THE SINGLE ELECTRON SPECTRUM OF InAs QUANTUM DOTS.  // Journal of Research of the National Institute of Standards & Tec;Jul/Aug2003, Vol. 108 Issue 4, p326 

    Reports on the effort of U.S. National Institute of Standards and Technology researchers to measure the single electron spectrum of a semiconductor heterostructure containing indium arsenide self-assembled quantum dots (QD). Applications of QD; Experiment on the fabrication of a single electron...

  • Optical Properties of Multi-Stacked InAs Quantum Dots Embedded in GaAs/InGaAs Strained Layer and its Annealing Behaviors. Kim, D. Y.; Kim, G. S.; Jeon, S. M.; Cho, M. Y.; Choi, H. Y.; Kim, M. S.; Lee, D.-Y.; Kim, J. S.; Eom, G.-S.; Leem, J.-Y. // Acta Physica Polonica, A.;Jun2010, Vol. 117 Issue 6, p941 

    Multi-stacked InAs QDs embedded in ten periods of GaAs/In0:1Ga0:9As strained layers were grown by MBE and their optical properties were investigated by using PL spectroscopy. For the QDs embedded in ten periods of GaAs/In0:1Ga0:9As strained layers, the PL intensity is enhanced about 4.7 times...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics