Room-temperature direct current operation of 290 nm light-emitting diodes with milliwatt power levels

Fischer, A.J.; Allerman, A.A.; Crawford, M.H.; Bogart, K.H.A.; Lee, S.R.; Kaplar, R.J.; Chow, W.W.; Kurtz, S.R.; Fullmer, K.W.; Figiel, J.J.
April 2004
Applied Physics Letters;4/26/2004, Vol. 84 Issue 17, p3394
Academic Journal
Ultraviolet light-emitting diodes (LEDs) have been grown by metalorganic vapor phase epitaxy using AlN nucleation layers and thick n-type Al0.48Ga0.52N current spreading layers. The active region is composed of three Al0.36Ga0.64N quantum wells with Al0.48Ga0.52N barriers for emission at 290 nm. Devices were designed as bottom emitters and flip-chip bonded to thermally conductive submounts using an interdigitated contact geometry. The ratio of quantum well emission to 330 nm sub-band gap emission is as high as 125:1 for these LEDs. Output power as high as 1.34 mW at 300 mA under direct current operation has been demonstrated with a forward voltage of 9.4 V. A peak external quantum efficiency of 0.18% has been measured at an operating current of 55 mA. © 2004 American Institute of Physics.


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