TITLE

High-stability ultrathin spin-on benzocyclobutene gate dielectric for polymer field-effect transistors

AUTHOR(S)
Lay-Lay Chua, I.; Ho, Peter K.H.; Sirringhaus, Henning; Friend, Richard H.
PUB. DATE
April 2004
SOURCE
Applied Physics Letters;4/26/2004, Vol. 84 Issue 17, p3400
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Using a thermal-crosslinkable siloxane bisbenzocyclobutene, high quality spin-on (solutionprocessable) gate dielectric layers as thin as 50 nm have been fabricated over the semiconductor layer for polymer field-effect transistors. This was demonstrated on a poly(9,9-dialkylfluorene-alt-triarylamine) as p-channel semiconductor, with a surfactantion-exchanged poly(3,4-ethylenedioxythiophene)-polystyrenesulfonate complex as top-gate electrode. The devices operate at a low voltage with a field-effect mobility of few 10-4 cm2/Vs, and can be continuously operated at 120 °C. © 2004 American Institute of Physics.
ACCESSION #
12879339

 

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