Optical evidence of an electrothermal degradation of InGaN-based light-emitting diodes during electrical stress

Pavesi, M.; Manfredi, M.; Salviati, G.; Armani, N.; Rossi, F.; Meneghesso, G.; Levada, S.; Zanoni, E.; Du, S.; Eliashevich, I.
April 2004
Applied Physics Letters;4/26/2004, Vol. 84 Issue 17, p3403
Academic Journal
The optical properties of blue InGaN-based light-emitting diodes aged at high current levels have been studied by electroluminescence and cathodoluminescence. The onset of a broad optical band peaked at about 3.1 eV in devices aged without a heat sink (junction temperature higher than 300 °C) has been correlated to an electrothermal threshold effect. The band is attributed to the dissociation of Mg–H complexes inside the p-type layers and to the consequent formation of Mg-related metastable complexes acting as acceptors. Subsequent electron-beam irradiation determines the almost complete quenching of the band. © 2004 American Institute of Physics.


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