Structure of 6H silicon carbide/silicon dioxide interface trapping defects

Meyer, David J.; Bohna, Nathaniel A.; Lenahan, Patrick M.; Lelis, Aivars J.
April 2004
Applied Physics Letters;4/26/2004, Vol. 84 Issue 17, p3406
Academic Journal
We utilize spin-dependent recombination (SDR) to observe deep level trap defects at or very near the interface of 6H silicon carbide and the SiO2 gate dielectric in SiC metal-oxide-semiconductor field effect transistors. The SDR response is strongly correlated to SiC/SiO2 interface recombination currents. The magnitude of the SDR response is correlated with processing-induced changes in interface trap density, an extremely strong indication that we are observing the dominating interface/near interface trapping defects. The SDR response is extremely large, as large as one part in 350. © 2004 American Institute of Physics.


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