1.24 μm InGaAs/GaAs quantum dot laser grown by metalorganic chemical vapor deposition using tertiarybutylarsine

Kaiander, I. N.; Sellin, R. L.; Kettler, T.; Ledentsov, N. N.; Bimberg, D.; Zakharov, N. D.; Werner, P.
April 2004
Applied Physics Letters;4/19/2004, Vol. 84 Issue 16, p2992
Academic Journal
Metalorganic chemical vapor deposition of GaAs-based laser diodes, using self-organized InGaAs quantum dots (QDs), emitting at >1.24 μm is demonstrated. The environment-friendly alternative precursor tertiarybutylarsine is used as a substitute for arsenic hydride. The active region contains ten closely stacked InGaAs QD layers embedded in a GaAs matrix. Lasing emission at such long wavelengths was achieved by overgrowing the In0.65Ga0.35As QDs with a thin In0.2Ga0.8As film. The application of an in situ annealing step leading to the evaporation of plastically relaxed defect clusters is shown to be decisive for the laser performance. A transparency current density of 7.2 A/cm2 per QD layer and an internal quantum efficiency of 75% were achieved at room temperature. © 2004 American Institute of Physics.


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