Room-temperature optically pumped laser emission from a-plane GaN with high optical gain characteristics

Koukstis, E.; Chen, C. Q.; Yang, J. W.; Shatalov, M.; Gaevski, M. E.; Adivarahan, V.; Khan, M. Asif
April 2004
Applied Physics Letters;4/19/2004, Vol. 84 Issue 16, p2998
Academic Journal
Photoluminescence (PL) and optical gain (OG) spectra of a-plane GaN layers have been analyzed over a wide range of excitation intensities. The samples were fully coalesced layers grown by metalorganic chemical vapor deposition over r-plane sapphire substrates using epitaxial layer overgrowth (ELOG) and selective area lateral epitaxy (SALE) procedures. ELOG and SALE a-plane samples showed a strong stimulated emission line in backscattering-geometry PL spectra along with extremely high OG coefficient values (in SALE samples more than 2000 cm-1). Structures prepared with natural cleaved facet cavities based on these films were used to demonstrate optically pumped room-temperature lasing. © 2004 American Institute of Physics.


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