Deep-ultraviolet emission from an InGaAs semiconductor laser

Wang, S. M.; Shen, Y. H.; Xu, J. X.; Hu, L. G.; Zhu, J.; Yang, D. R.; Zhang, H.; Zeng, Y. W.; Yao, J. Q.
April 2004
Applied Physics Letters;4/19/2004, Vol. 84 Issue 16, p3007
Academic Journal
It is reported that a normal InGaAs laser diode (LD) operating at 980 nm possesses a second harmonic at 490 nm and a strong deep-UV emission at room temperature. By comparing with the radiation from cadmium sulphide (CdS) nanoparticles and nanowires, it is found that the UV emission from the LD can be attributed to a characterized radiation of nanoscaled semiconductors. By doping different semiconductor nanomaterials into the active layers of the LD and taking some effective techniques, such as cavity optimization, the wavelength, and the power output of the UV emission could be adjusted. © 2004 American Institute of Physics.


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