TITLE

Deep-ultraviolet emission from an InGaAs semiconductor laser

AUTHOR(S)
Wang, S. M.; Shen, Y. H.; Xu, J. X.; Hu, L. G.; Zhu, J.; Yang, D. R.; Zhang, H.; Zeng, Y. W.; Yao, J. Q.
PUB. DATE
April 2004
SOURCE
Applied Physics Letters;4/19/2004, Vol. 84 Issue 16, p3007
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
It is reported that a normal InGaAs laser diode (LD) operating at 980 nm possesses a second harmonic at 490 nm and a strong deep-UV emission at room temperature. By comparing with the radiation from cadmium sulphide (CdS) nanoparticles and nanowires, it is found that the UV emission from the LD can be attributed to a characterized radiation of nanoscaled semiconductors. By doping different semiconductor nanomaterials into the active layers of the LD and taking some effective techniques, such as cavity optimization, the wavelength, and the power output of the UV emission could be adjusted. © 2004 American Institute of Physics.
ACCESSION #
12817106

 

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