Visible light emission from polymer-based field-effect transistors

Sakanoue, Tomo; Fujiwara, Eiichi; Yamada, Ryo; Tada, Hirokazu
April 2004
Applied Physics Letters;4/19/2004, Vol. 84 Issue 16, p3037
Academic Journal
Field-effect transistors (FETs) based on poly [2-methoxy, 5-(2′-ethyl-hexoxy)-1, 4-phenylenevinylene] (MEH-PPV) were prepared with bottom-contact type interdigital electrodes of Cr/Au and Al/Au on the SiO2/Si substrates. MEH-PPV exhibited a p-type semiconducting behavior and orange light emission was observed when the devices were operated in vacuum. It was found that the luminescence efficiency of the FETs with Al/Au electrodes was higher than that of Cr/Au electrodes. The simultaneous injection of holes and electrons into MEH-PPV occurred efficiently with the application of Al/Au heteroelectrodes. © 2004 American Institute of Physics.


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